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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of ultrathin oxide prepared by low-temperature wafer loading and nitrogen preannealing before oxidation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1378-1385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we report a high-performance ultrathin oxide (≈80 A(ring)) prepared by a low-temperature wafer loading and N2 preannealing before oxidation. This recipe can reduce native oxide thickness and thermal stress compared to the conventional oxidation recipe. The high-resolution transmission electron microscopy reveals that the SiO2/Si interface is atomically flat, and a thin crystalline-like oxide layer about 7 A(ring) exists at the interface. Oxides prepared by the proposed recipe show a very high dielectric breakdown field (≥16 MV/cm) and a very low interface state density (Nit ≈ 3 × 109 eV−1 cm−2 at midgap). The effective barrier height at cathode derived from the slopes of log(Jg/E2ox) vs 1/Eox and tbd vs 1/Eox plots is about 3.9 eV, instead of 3.2 eV for the control sample. It also shows a better immunity to the charge trapping and interface state generation under high-field stressing, and superior time-dependent dielectric breakdown characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351749
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  • 2
    Electronic Resource
    Electronic Resource
    Role of cladding layer thicknesses on strained-layer InGaAs/GaAs single and multiple quantum well lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8027-8034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influences of cladding layer thicknesses on the performance of strained-layer InGaAs/GaAs graded-index separated confinement heterostructure quantum well lasers have been studied. The waveguiding property of the laser structure was analyzed using the transfer matrix method. In this work, experimental results and the calculated results showed that threshold current densities and external quantum efficiencies both were crucially dependent on the thicknesses of cladding layer for both single and multiple quantum well lasers. The minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal total loss for both single and multiple quantum well devices were determined experimentally and theoretically.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353917
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  • 3
    Electronic Resource
    Electronic Resource
    Mechanism of nitrogen coimplant for suppressing boron penetration in p+-polycrystalline silicon gate of p metal–oxide semiconductor field effect transistor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1781-1782 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of the nitrogen co-implant to suppress the boron penetration in p+-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF+2 combines with the boron to form a B–N complex which results in a retardation of boron diffusion. It is found that metal–oxide–silicon capacitors with nitrogen implantation show improved electrical properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117484
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  • 4
    Electronic Resource
    Electronic Resource
    Improvement on the current-voltage characteristics of polycrystalline silicon contacted n+-p junctions with high-field stressing (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1031-1033 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Improvement on the current-voltage characteristics of polycrystalline silicon contacted n+-p junctions after they were applied a high-field scanned stressing is reported. For the stressed diodes, the leakage current decreased as much as two orders, the breakdown voltage shifted from −45 to −60 V, and the forward ideality factor also decreased. Scanning electron microscopy photographs on the cross-sectional view of the junctions revealed that local melting might have occurred during stressing to cause the improvement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102606
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  • 5
    Electronic Resource
    Electronic Resource
    Improvement of electrical characteristics of polycrystalline silicon-contacted diodes after forward bias stressing (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1904-1906 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Improvement of the electrical characteristics of polycrystalline silicon (polysilicon) contacted n+-p diodes after application of a forward bias stressing is reported. The improvement existed for diodes whose emitter-implanted doses of arsenic were larger than 6×1015 cm−2 for HF-dipped devices, and 1×1016 cm−2 for H2SO4 heat-treated devices. The improvement is believed to be due to the neutralization by arsenic of dangling bonds at polysilicon grain boundaries and at the poly/mono silicon interfaces during the stressing process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104007
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  • 6
    Electronic Resource
    Electronic Resource
    Tantalum silicide Schottky contacts to GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 642-645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tantalum silicide (TaSix ) films with different Si to Ta ratios (x) as Schottky contacts to GaAs have been studied. The films were prepared by coevaporation. The metallurgical properties of the film and the stability of the silicide-GaAs interface were studied by x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The films were annealed at various temperatures (up to 850 °C) for thermal stability evaluation and the Schottky diodes were characterized by I-V and C-V measurements. It was found that the Si to Ta ratio (x) plays an important role in the thermal stability of the Schottky diode. For small x values, there are interactions between Ta and GaAs, probably a compound formation, after high-temperature annealing. For large x values, the degradation mechanism for the Schottky diodes after high-temperature annealing appears to be the out-diffusion of Ga and As from the substrate. The best composition for a thermally stable Schottky barrier is Ta5 Si3, which shows stable Schottky characteristics after annealing with temperatures up to 800 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343097
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Low temperature growth of silicon-boron layer by ultrahigh vacuum chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1853-1855 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A polycrystalline silicon-boron (Si-B) layer with a thickness of 180 nm was grown on recrystallized amorphous silicon in an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system using pure SiH4 and B2H6 (1% in H2). The growth temperature was as low as 550 °C. Auger electron spectroscopy and secondary ion mass spectroscopy showed that the boron concentration is extraordinarily high (2×1022 cm−3). From the analysis of transmission electron diffraction patterns, the phase of silicon hexaboride (SiB6) was found to be present in the as-deposited Si-B layer. After thermal annealing, most of the boron atoms in the Si-B layer were found to be immobile. The presence of SiB6 in the Si-B layer may lead to the reduction of boron diffusivity in the Si-B layer during thermal annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111777
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