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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 969-971 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: HgTe-CdTe superlattices of high crystalline quality, and with negligible interdiffusion, have been successfully grown at low substrate temperatures (150–170 °C) by molecular beam epitaxy. Optical spectra exhibiting multiple steplike absorption edge features have been measured on as-grown and thermally annealed samples. The data provide valuable information on the superlattice subband structure when coupled with a suitable model. These results then can be used to obtain semiquantitative measures of layer interdiffusion along with such quantities as valence-band offset and strain. To observe subband structure in the optical data, it is necessary to fabricate samples having homogeneous HgTe and CdTe layer thicknesses in the superlattice growth direction. Homogeneity of layers was achieved by carefully controlling elemental source fluxes and shutter times during the epitaxial growth process. Substantial changes in the subband-related absorption structure could be induced by annealing the superlattice samples at temperatures just slightly above the growth temperature. An observed shift of the fundamental absorption edge to higher energy, as well as an apparent broadening of the subband absorption structure upon annealing, can be explained by interdiffusion of HgTe and CdTe layers.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1516-1518 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report photoluminescence in HgTe-CdTe superlattices that originates in the CdTe layers. We see a near-band-gap line at 1.493 eV, which demonstrates that strain and Hg-Cd substitutional diffusion are small in the CdTe layers. In addition, a deep-level line at 0.775 eV, possibly due to recombination along dislocation lines, is observed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2670-2671 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of a broad photoluminescence line at 0.75 eV in CdTe grown by molecular-beam epitaxy at both high- and low-substrate temperatures. This line is in excellent agreement with the E2 line observed by deep-level transient spectroscopy by previous workers. The origin of both of these lines is probably a deep defect or impurity level native to CdTe.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1550-1553 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report identification of a reliable p-type impurity dopant that can be used during molecular-beam-epitaxial (MBE) growth of HgTe-CdTe superlattices. Silver doping during the epitaxial growth of (100)-oriented HgTe-CdTe superlattices is shown to yield reproducible hole concentrations in the range of 1016–1018 cm−3. When normalized by the growth rate, the hole concentrations show an exponential dependence on the temperature of the Ag effusion cell. The diffusion of Ag in step-doped junctions was studied by use of secondary-ion mass spectrometry. The diffusion coefficient of Ag at the low MBE growth temperatures was found to be in the range of (1–5)×10−13 cm2/s. These values are comparable to recently reported values in MBE-grown (Hg,Cd)Te alloys and suggest that strain does not produce any new diffusion paths in the superlattices.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1951-1954 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two important quantities in determining the electrical properties of a heterojunction are the dopant and compositional grading profiles. Although molecular-beam epitaxy (MBE) has been used to grow high-quality layers of (Hg,Cd)Te, there has been no report of attempts to control these important quantities by use of conventional MBE growth techniques. We report the identification of a reliable p-type impurity dopant that can be used for MBE-(Hg,Cd)Te and we demonstrate, by use of secondary-ion mass spectroscopy, that conventional MBE growth techniques can be used with silver to produce the required dopant and compositional grading profiles to fabricate p-on-n heterojunctions.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3571-3573 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study has been made of silicon dopant compensation in GaAs grown by molecular-beam epitaxy. The compensation ratio is derived from Hall measurements for a number of samples grown under identical conditions except for silicon dopant flux. Results are compared with low-temperature (4.2 K) photoluminescence measurements. The donor and acceptor concentrations are both related to the silicon effusion cell temperature by Arrhenius relations; however, each is fitted with a different activation energy. This leads to increasing compensation with increasing dopant flux.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1573-515X
    Keywords: acidification ; acid neutralizing capacity ; calcite ; lake chemistry ; liming
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Geosciences
    Notes: Abstract The Experimental Watershed Liming Study (EWLS) was initiated to evaluate the application of CaCO3 to a forested watershed in an effort to mitigate the acidification of surface water. The objective of the EWLS was to assess the response of the Woods Lake watershed to an experimental addition of CaCO3. During October 1989, 6.89 Mg CaCO3/ha was applied by helicopter to two subcatchments comprising about 50% (102.5 ha) of the watershed area. The EWLS involved individual investigations of the response of soil and soil water chemistry, forest and wetland vegetation, soil microbial processes, wetland, stream and lake chemistry, and phytoplankton and fish to the CaCO3 treatment. In addition, the Integrated Lake/Watershed Acidification (ILWAS) model was applied to the site to evaluate model performance and duration of the treatment. The results of these studies are detailed in this volume. The purposes of this introduction and synthesis paper are to: 1) present the overall design of the EWLS, 2) discuss the linkages between the individual studies that comprise the EWLS, and 3) summarize the response of the lakewater chemistry to watershed addition of CaCO3 and compare these results to previous studies of direct lake addition. An analysis of lake chemistry revealed the watershed treatment resulted in a gradual change in pH, acid neutralizing capacity (ANC) and Ca2+ in the water column. This pattern was in contrast to direct lake additions of CaCO3 which were characterized by abrupt changes following base addition and subsequent rapid reacidification. Over the three-year study period, the supply of ANC to drainage waters was largely derived from dissolution of CaCO3 in wetlands. Relatively little dissolution of CaCO3 occurred in freely draining upland soils. The watershed treatment had only minor effects on forest vegetation. The watershed treatment eliminated the episodic acidification of streamwater and the near-shore region of the lake during snowmelt, a phenomenon that occurred during direct lake treatments. Positive ANC water in the near-shore area may improve chemical conditions for fish reproduction, and allow for the development of a viable fish population. The watershed CaCO3 treatment also decreased the transport of Al from the watershed to the lake, and increased the concentrations of dissolved organic carbon (DOC) and dissolved silica (H4SiO4) in stream and lakewater. The watershed treatment appeared to enhance soil nitrification, increasing concentrations of NO3 − in soilwater and surface waters. However, the acidity associated with this NO3 − release was small compared to the increase in ANC due to CaCO3 addition and did not alter the acid-base status of Woods Lake. Acid neutralizing capacity (ANC) budgets for 12-month periods before and after the watershed treatment showed that the lake shifted from a large source of ANC to a minor source due to retention of SO4 2−, NO3 −, Al and the elevated inputs of Ca2+ associated with the watershed CaCO3 application. In contrast to the direct lake treatments, Ca2+ inputs from the watershed application were largely transported from the lake.
    Type of Medium: Electronic Resource
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