ISSN:
1432-0630
Keywords:
68.35F
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The model for the interacting diffusion of two dopants in silicon is analysed in the limit of high peak concentration of one dopant. Several distinct regions of dopant behaviour are identified, in each of which the governing equations are significantly simpler than the full problem. Of particular practical interest is an interior layer which occurs at the pn junction.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00348380
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