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  • 1
    Electronic Resource
    Electronic Resource
    A study of deep-level defects in metalorganic vapor-phase-epitaxy-grown ZnSe on GaAs by deep-level transient spectroscopy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2535-2537 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level defects in Li+-implanted ZnSe epilayer grown by metalorganic vapor-phase epitaxy (MOVPE) on a GaAs substrate have been characterized by using the deep-level transient spectroscopy method under different post-implantation annealing conditions. Four electron traps with energy levels of Ec−0.3, 0.33, 0.55, and 1.02 eV and one hole trap with an energy level of Ev+0.23 eV were detected. Possible physical origins and formation mechanisms for these defects were discussed using the defect model proposed by Myles and Sankey [Phys. Rev. B 29, 6810 (1984)]. The results showed that interdiffusion between the ZnSe/GaAs heterointerface plays an important role on the formation of native defects in the MOVPE-grown ZnSe epitaxial films on the GaAs substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346476
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  • 2
    Electronic Resource
    Electronic Resource
    A high resolution long travel friction-drive micropositioner with programmable step size (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2776-2782 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A piezoelectric-driven Scott–Russel linear micropositioner utilizing the stick-slip effect of friction to drive a slider is presented. Effects of sawtooth, impulse, and transcendental electrical wave forms on the device performance are studied via numerical simulation and experiment test. The experiment demonstrates that positioning step sizes of 0.05–120 μm can be achieved at low input voltages of 2–25 V and essentially with unlimited travel range. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149794
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  • 3
    Electronic Resource
    Electronic Resource
    Low dark current, planar In0.4Ga0.6As p-i-n photodiode prepared by molecular beam epitaxy growth on GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2396-2398 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here the successful fabrication of a planar, low dark current, and high sensitivity In0.4Ga0.6As p-i-n photodiode fabricated on a semi-insulating GaAs substrate with the aid of a multistage strain-relief buffer system. Without using surface passivation and anti-reflection coatings, the detector has a quantum efficiency of 42% and a peak responsivity of 0.45 A/W at 1.3 μm wavelength. The reverse leakage current for the mesa-etched photodiode with an active area of 2×10−4 cm2 is 5×10−9 A at −5 V, and the breakdown voltage exceeds 25 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104882
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 886-888 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-voltage measurements were used to analyze buried oxide layers formed by the implantation of oxygen into silicon substrates. The analysis is based on the extension of conventional metal/oxide/semiconductor capacitor theory to the two buried oxide interfaces of the epilayer/oxide/substrate structure. The processing parameters include oxygen doses of 1.8 or 2.0×1018 cm−2, implant temperature of 500 °C, and anneal temperature of 1250 °C for 2 or 16 h. The results are fixed oxide charge densities of 2–3×1011 and 1–2×1010 cm−2 for the epi/oxide and substrate/oxide interfaces, respectively; interface trap densities are 0.5 to 2×1011 cm−2 eV−1 for the epi/oxide interface, and not measurable for the substrate/oxide interface. The epilayer/oxide interface was found to be more sensitive to processing variations than the substrate/oxide interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99262
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  • 5
    Electronic Resource
    Electronic Resource
    Computer simulations of the proton irradiated (AlGa)As-GaAs solar cells (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4611-4616 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An improved numerical model for computing the displacement defect density, the damage constants for the minority-carrier diffusion lengths and the degradations of the short-circuit current Isc, open-circuit voltage Voc, and the conversion efficiency ηc in a proton irradiated (AlGa)As-GaAs solar cell is presented in this paper. The model assumed that the radiation-induced displacement defects form effective recombination centers which reduces the minority-carrier diffusion length and hence degrades the Isc, Voc, and ηc of the solar cell. Excellent agreement was obtained between our calculated values and the measured Isc, Voc, and ηc in the proton irradiated GaAs solar cells for proton energies varying from 100 keV to 10 MeV and fluences from 1010 to 1012 cm−2 under normal incidence condition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339058
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of DX center and spatial distribution of electrons on the density of two-dimensional electron gas in modulation-doped AlGaAs/GaAs heterojunction structure (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3789-3791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The equilibrium density of two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterojunction structure has been studied by considering the deep electron traps (i.e., DX center) in doped AlGaAs layer, the spatial distribution of electrons in three conduction-band minima (Γ, L, and X), and the heavy doping effect. It is shown that the amount of conduction band-bending increases and the equilibrium density of two-dimensional electron gas decreases significantly as a result of incorporating these effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337546
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  • 7
    Electronic Resource
    Electronic Resource
    Uniform, high-gain AlGaAs/InGaAs/GaAs heteroemitter bipolar transistors using chemical passivation and nonalloyed ohmic contacts (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 383-385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An Al0.25Ga0.75As/In0.08Ga0.92As/GaAs heteroemitter bipolar transistor (HEBIT) with a uniformly high common-emitter current gain (β) of 500 was demonstrated for the first time. Using a simple chemical treatment [P2S5/(NH4)2S], we have greatly reduced the surface recombination in the emitter-base junction perimeters, resulting in a tenfold increase in the maximum current gain of the device at low collector currents. InGaAs nonalloyed ohmic contacts were also employed to form both emitter and base electrodes in a one-step process. To evaluate the performance of the HEBIT, we conducted current-voltage measurements and compared the Gummel plots at 300 and 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106664
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  • 8
    Electronic Resource
    Electronic Resource
    The density of states in degenerate n-type germanium and silicon
    Amsterdam : Elsevier
    Solid State Electronics 12 (1969), S. 505-507 
    Details
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1101(69)90084-7
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  • 9
    Electronic Resource
    Electronic Resource
    The photomagnetoelectric and the photoconductive effects in n-type silicon at low temperatures
    Amsterdam : Elsevier
    Solid State Communications 7 (1969), S. ii 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(69)90780-7
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  • 10
    Electronic Resource
    Electronic Resource
    Replicative MCM7 protein as a proliferation marker in endometrial carcinoma: a tissue microarray and clinicopathological analysis (2005)
    Oxford, UK : Blackwell Science Ltd
    Histopathology 46 (2005), S. 0 
    Details
    ISSN: 1365-2559
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Aims : To assess, in tissue microarray (TMA), the proliferative activity of endometrial carcinoma using one of the minichromosome maintenance (MCM) proteins (MCM7), and to explore its potential value for prognosis. MCM proteins are essential for eukaryotic DNA replication and have recently been used to define the proliferative compartments in human tissues.Methods and results : Immunohistochemistry for MCM7 and Ki67 was performed on TMAs constructed from 212 cases of endometrial carcinoma. MCM7 and Ki67 expression was quantified according to the extent of nuclear staining. An analysis was carried out of the association between MCM7 expression and that of Ki67 and the clinicopathological characteristics of endometrial carcinoma. MCM7 and Ki67 immunoreactivity was clearly evident in the nuclei of tumour cells. MCM7 and Ki67 labelling indices in endometrial carcinomas correlated with each other (P 〈 0.001). A significant correlation existed between the MCM7 labelling index and histological grade (P = 0.008) and patients' age at diagnosis (P 〈 0.001). Well-differentiated carcinomas and younger patients had a lower MCM7 index. Poor survival was observed in patients with endometrial carcinoma with a high MCM7 index (P = 0.03) and MCM7 was found to be an independent prognostic factor by multivariate analysis (P = 0.04). The Ki67 labelling index correlated with histological grade (P = 0.01) but had no significant prognostic impact (P = 0.50).Conclusions : In this TMA study on endometrial carcinoma, MCM7 was found to be a more reliable and useful marker than Ki67 in assessing tumour proliferation and in the prognosis of patients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2559.2005.02069.x
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