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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8993-8997 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical conductivity is an important parameter in understanding the mechanism by which power is coupled to a radio-frequency (rf) discharge plasma, as well as in determining the external electrical characteristics of the discharge. We present the results of computations of the resistive and reactive components of the collisional impedance of an argon plasma at 13.56 MHz. The plasma conductivity is computed from the two-term solution to the Boltzmann equation, and includes the velocity dependence of the electron collision frequency, as well as non-Maxwellian electron energy distribution functions. We compare these results with those obtained from the widely used classical expression for plasma impedance, in which the electron collision frequency is computed either in the dc or high frequency limit. Our results show that neither of the classical limiting expressions are adequate for discharge pressures in the range of few mTorr to a few Torr, which includes the region of operation for many rf discharges used in many applications of plasma technology. Further, the classical formula assumes that in the high-frequency limit the plasma reactance is due entirely to electron inertia. We demonstrate that the plasma reactance may be strongly influenced, and in some cases dominated, by electron collisions. Results are presented in graphical form, which are useful in evaluating the importance of these effects on the interpretation of experimental results and the modeling of rf discharges. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 271-272 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A rf-driven discharge is used to produce a beam of metastable krypton atoms at the 5s(3/2)2 level with an angular flux density of 4×1014 s−1 sr−1 and most probable velocity of 290 m/s, while consuming 7×1016 krypton atoms/s. When operated in a gas-recirculation mode, the source consumes 2×1015 krypton atoms/s with the same atomic-beam output. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3842-3848 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Submonolayer sensitivity to thin-film nucleation and growth in real time on the millisecond scale has been achieved with a unique rotating polarizer multichannel ellipsometer. Continuous spectra in the ellipsometry angles {ψ(hv),Δ(hv)} consisting of ∼50 points from hv=1.5 to 4.3 eV have been obtained with acquisition and repetition times as short as 16 and 32 ms, respectively. As an example of the instrument capabilities, we present results for hydrogenated amorphous silicon (a-Si:H) growth on c-Si by plasma-enhanced chemical vapor deposition at a rate of 400 A(ring)/min. In this example, the acquisition and repetition times are both 64 ms, and at this speed a precision in (ψ,Δ) of ∼0.02–0.03° is obtained under optimum conditions. We observe a-Si:H nucleation in the first 2 s of deposition, and detect relaxation of nucleation-induced surface roughness with submonolayer sensitivity.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6537-6539 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose an alternative approach to the 1/D-type expansions for evaluating properties of generalized Gutzwiller wave functions (GWF's) in low dimensions. Our expansion uses the sum rule and symmetries of the trial wave function explicitly. We apply the scheme to an antiferromagnetic generalization of the GWF for the 1D Hubbard model. We find good agreement with known results from variational Monte Carlo calculations and a significant improvement over previous approximations.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality amorphous hydrogenated germanium has been deposited using the diode rf glow discharge method out of a gas plasma of GeH4 and H2. The optical, electrical, and structural properties of this material have been extensively characterized. The optical and electrical properties are all consistent with material containing a low density of defect related states in the energy gap. In particular, this material has an ημτ=3.2×10−7 cm2/V, ratio of photocurrent to dark current of 1.3×10−1, and flux dependence of the photocurrent with γ=0.79 at 1.25 eV measured using photoconductivity, a μτ=4×10−8 cm2/V measured using time of flight, an Urbach energy of 51 meV and α at 0.7 eV of 8.3 cm−1 measured using photothermal deflection spectroscopy, a dangling bond spin density of 5×1016 cm−3 measured using electron spin resonance, photoluminescence with a peak energy position of 0.81 eV and full width at half maximum of 0.19 eV, an activation energy of 0.52 eV and σ0 of 6.1×103 (Ω cm)−1 measured using dark conductivity, and an E04 band gap of 1.24 eV measured by optical absorption. The structural measurements indicate a homogeneous material lacking any island/tissue and columnar structure when investigated using transmission and scanning electron microscopy, respectively. Hydrogen concentrations calculated from infrared and gas evolution measurements can only by reconciled by postulating a large quantity of unbonded hydrogen whose presence is confirmed using deuteron magnetic resonance. The bonded deuterium component, as seen in this film using DMR, has a spin-lattice relaxation time of the order of 4000 s. The differential scanning calorimetry measurement shows crystallization occurring at 421 °C and the presence of large compressive stresses has been confirmed using a bending-beam method. The experimental details necessary to interpret the quantities quoted here are set out in the text which follows. It is considered that the very good optical and electrical properties of this as yet unoptimized material are directly related to the structural properties detailed above.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 30 (1987), S. 2101-2109 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that high-phase-velocity compressional Alfvén waves have the desirable features needed for efficient current drive in fusion-reactor-like conditions; the energy deposition is low on the α particles, and high on the hot electrons in the plasma interior.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1403-1405 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A practical difficulty in Monte Carlo simulations of electron transport occurs when the electron number density changes significantly over the time or length scale of the simulation. In this letter, we present a simple scaling procedure to resolve this difficulty that is easy to implement and that is exact for linear collision operators. A simulation of electron transport in nitrogen at high electric field strength is included to illustrate this rescaling procedure.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1720-1722 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon-carbon alloys (a-SiC:H) with band gaps around 1.9 eV have been prepared using trisilylmethane (TSM) as the carbon source by plasma-enhanced chemical vapor deposition. Compared to a-SiC:H alloys prepared from the conventional CH4/SiH4 mixture, the TSM-based films show sharper optical-absorption edge, weaker defect-related optical absorption, lower methyl group concentration, longer ambipolar diffusion length, and higher photoconductivity.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2543-2545 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed techniques to determine the near-infrared to near-ultraviolet dielectric function and optical gap of ultrathin amorphous silicon [a-Si:(H)] using real-time spectroscopic ellipsometry during preparation and processing. The techniques have been applied to ∼50 A(ring) a-Si:H films prepared by plasma-enhanced chemical vapor deposition, and to ∼250 A(ring) pure a-Si chemically modified by atomic H exposure. For the latter, the time evolution of the bonded H content can be estimated along with the evolution of the gap.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2549-2551 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral dependence of the photocurrent in intrinsic hydrogenated amorphous silicon (a-Si:H) films was measured in the annealed and light-soaked states. The photocurrents were modeled using numerical analysis which quantified the recombination in both the bulk as well as at the film surface and glass substrate interface. The results on films, having thicknesses between 1 and 3 μm, are consistent with thickness independent bulk transport properties and surface and substrate interface recombination velocities of (3–6)×104 and (1–2)×106 cm/s, respectively.
    Type of Medium: Electronic Resource
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