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  • 1
    Digitale Medien
    Digitale Medien
    A new expansion for generalized Gutzwiller wave functions: Antiferromagnetic case : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6537-6539 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We propose an alternative approach to the 1/D-type expansions for evaluating properties of generalized Gutzwiller wave functions (GWF's) in low dimensions. Our expansion uses the sum rule and symmetries of the trial wave function explicitly. We apply the scheme to an antiferromagnetic generalization of the GWF for the 1D Hubbard model. We find good agreement with known results from variational Monte Carlo calculations and a significant improvement over previous approximations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352555
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  • 2
    Digitale Medien
    Digitale Medien
    Spectroscopic ellipsometry on the millisecond time scale for real-time investigations of thin-film and surface phenomena (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3842-3848 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Submonolayer sensitivity to thin-film nucleation and growth in real time on the millisecond scale has been achieved with a unique rotating polarizer multichannel ellipsometer. Continuous spectra in the ellipsometry angles {ψ(hv),Δ(hv)} consisting of ∼50 points from hv=1.5 to 4.3 eV have been obtained with acquisition and repetition times as short as 16 and 32 ms, respectively. As an example of the instrument capabilities, we present results for hydrogenated amorphous silicon (a-Si:H) growth on c-Si by plasma-enhanced chemical vapor deposition at a rate of 400 A(ring)/min. In this example, the acquisition and repetition times are both 64 ms, and at this speed a precision in (ψ,Δ) of ∼0.02–0.03° is obtained under optimum conditions. We observe a-Si:H nucleation in the first 2 s of deposition, and detect relaxation of nucleation-induced surface roughness with submonolayer sensitivity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1143280
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  • 3
    Digitale Medien
    Digitale Medien
    Beam of metastable krypton atoms extracted from a rf-driven discharge (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 271-272 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A rf-driven discharge is used to produce a beam of metastable krypton atoms at the 5s(3/2)2 level with an angular flux density of 4×1014 s−1 sr−1 and most probable velocity of 290 m/s, while consuming 7×1016 krypton atoms/s. When operated in a gas-recirculation mode, the source consumes 2×1015 krypton atoms/s with the same atomic-beam output. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1328400
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  • 4
    Digitale Medien
    Digitale Medien
    Electrical conductivity in high-frequency plasmas (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8993-8997 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electrical conductivity is an important parameter in understanding the mechanism by which power is coupled to a radio-frequency (rf) discharge plasma, as well as in determining the external electrical characteristics of the discharge. We present the results of computations of the resistive and reactive components of the collisional impedance of an argon plasma at 13.56 MHz. The plasma conductivity is computed from the two-term solution to the Boltzmann equation, and includes the velocity dependence of the electron collision frequency, as well as non-Maxwellian electron energy distribution functions. We compare these results with those obtained from the widely used classical expression for plasma impedance, in which the electron collision frequency is computed either in the dc or high frequency limit. Our results show that neither of the classical limiting expressions are adequate for discharge pressures in the range of few mTorr to a few Torr, which includes the region of operation for many rf discharges used in many applications of plasma technology. Further, the classical formula assumes that in the high-frequency limit the plasma reactance is due entirely to electron inertia. We demonstrate that the plasma reactance may be strongly influenced, and in some cases dominated, by electron collisions. Results are presented in graphical form, which are useful in evaluating the importance of these effects on the interpretation of experimental results and the modeling of rf discharges. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362631
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  • 5
    Digitale Medien
    Digitale Medien
    Density rescaling procedure for Monte Carlo simulations of electron transport (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1403-1405 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A practical difficulty in Monte Carlo simulations of electron transport occurs when the electron number density changes significantly over the time or length scale of the simulation. In this letter, we present a simple scaling procedure to resolve this difficulty that is easy to implement and that is exact for linear collision operators. A simulation of electron transport in nitrogen at high electric field strength is included to illustrate this rescaling procedure.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100680
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  • 6
    Digitale Medien
    Digitale Medien
    Improvement of the optical and photoelectric properties of hydrogenated amorphous silicon-carbon alloys by using trisilylmethane as a feedstock (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1720-1722 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Hydrogenated amorphous silicon-carbon alloys (a-SiC:H) with band gaps around 1.9 eV have been prepared using trisilylmethane (TSM) as the carbon source by plasma-enhanced chemical vapor deposition. Compared to a-SiC:H alloys prepared from the conventional CH4/SiH4 mixture, the TSM-based films show sharper optical-absorption edge, weaker defect-related optical absorption, lower methyl group concentration, longer ambipolar diffusion length, and higher photoconductivity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.106229
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  • 7
    Digitale Medien
    Digitale Medien
    In situ determination of dielectric functions and optical gap of ultrathin amorphous silicon by real time spectroscopic ellipsometry (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2543-2545 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have developed techniques to determine the near-infrared to near-ultraviolet dielectric function and optical gap of ultrathin amorphous silicon [a-Si:(H)] using real-time spectroscopic ellipsometry during preparation and processing. The techniques have been applied to ∼50 A(ring) a-Si:H films prepared by plasma-enhanced chemical vapor deposition, and to ∼250 A(ring) pure a-Si chemically modified by atomic H exposure. For the latter, the time evolution of the bonded H content can be estimated along with the evolution of the gap.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105947
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  • 8
    Digitale Medien
    Digitale Medien
    Effect of surface recombination on the spectral dependence of photocurrent in intrinsic hydrogenated amorphous silicon films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2549-2551 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The spectral dependence of the photocurrent in intrinsic hydrogenated amorphous silicon (a-Si:H) films was measured in the annealed and light-soaked states. The photocurrents were modeled using numerical analysis which quantified the recombination in both the bulk as well as at the film surface and glass substrate interface. The results on films, having thicknesses between 1 and 3 μm, are consistent with thickness independent bulk transport properties and surface and substrate interface recombination velocities of (3–6)×104 and (1–2)×106 cm/s, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105949
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  • 9
    Digitale Medien
    Digitale Medien
    Effects of microstructure on transport properties of undoped hydrogenated amorphous silicon films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 955-957 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electronic transport properties have been investigated in undoped hydrogenated amorphous silicon (a-Si:H) materials whose microstructure and void fraction are changed by deposition temperature (Ts). The hydrogen content in these materials decreases from 15 to 5 at. % and the void fraction by 14% as Ts is raised from 200 to 350 °C. The photo and dark conductivities are measured from 40 to 190 °C and extended state electron mobilities are derived from a self-consistent analysis. The room temperature mobilities are found to increase from 0.8 to 30 cm2/V s and become less temperature dependent as Ts increases. These temperature activated mobilities explain the Meyer–Neldel rule [Z. Tech. Phys. 18, 588 (1937)] in a-Si:H materials whose dark conductivity activation energies are greater than 0.4 eV where it cannot be explained by the statistical shift of the Fermi level.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109856
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  • 10
    Digitale Medien
    Digitale Medien
    Heating and current drive with high-phase-velocity compressional Alfvén waves (1987)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 30 (1987), S. 2101-2109 
    Details
    ISSN: 1089-7666
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is shown that high-phase-velocity compressional Alfvén waves have the desirable features needed for efficient current drive in fusion-reactor-like conditions; the energy deposition is low on the α particles, and high on the hot electrons in the plasma interior.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.866145
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