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  • 1
    Electronic Resource
    Electronic Resource
    A combination of rapid thermal processing and photochemical deposition for the growth of SiO2 suitable for InP device applications (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5636-5640 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combination of ultraviolet and infrared lamps is used to obtain the growth of SiO2 on InP substrates at low temperature under rapid thermal processing conditions. Thorough infrared spectroscopy characterization of the dielectric layers shows that the ultraviolet-assisted growth process without mercury sensitization leads to good quality silica interspersed with oxygen-deficient inclusions. Rapid annealing improves them so as to be suitable for InP-based field-effect devices, with interface trap density around 5×1011 cm−2. A study of the interface trap density made with this technique shows the relevance of fast thermal processing, even at low growth temperatures, for the improvement of these devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346976
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  • 2
    Electronic Resource
    Electronic Resource
    Stress cancellation in silicon oxynitride/InP structures obtained by rapid thermal chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2802-2805 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal chemical vapor deposition was utilized to deposit silicon-based dielectrics on III-V materials at high temperature. Silicon oxynitride films can be deposited on InP at 750 °C with compositions varying between silicon dioxide and silicon nitride. Secondary ion mass spectroscopy and nuclear reaction analysis measurements show that the oxygen concentration in the layers varies continuously with the oxidant gas flow rate. The overall stoichiometry of the films can be controlled with this parameter. The composition of the layers has a direct incidence on the mechanical tension of the insulator/semiconductor structures. A highly sensitive optical setup has been developed to measure the tension on these samples in order to determine the stoichiometry of the silicon oxynitride (SiOxNy) film that leaves the structure unstressed. The stress-free film composition is shown to depend also strongly on the thickness of the layer. A study of the overall stress introduced in a structure during its fabrication is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351531
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  • 3
    Electronic Resource
    Electronic Resource
    Imaging of the optical mode of waveguiding devices by scanning near-field optical microscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4339-4344 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning optical microscopy with uncoated dielectric silica probe is used in the near field to investigate the propagation of optical modes along tapered integrated semiconductor optical amplifier devices and at larger working distances to study the electromagnetic intensity profile in the focal plane of various microlensed fibers. We show how this technique provides images of the mode structure of optoelectronic devices and profiled optical fibers with typical sizes in the range 2–10 μm, with an accuracy of 0.2 μm in beamwaist measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359838
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  • 4
    Electronic Resource
    Electronic Resource
    Evidence for a transitory composition pattern in the early stages of the photochemical deposition of silica films on semiconductors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 43-45 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the early stages of the photodeposition of SiO2 on semiconductors from silane–oxygen gaseous mixtures under UV irradiation. For film thicknesses below 100 A(ring), the films exhibit a specific oxygen-deficient composition which become stoichiometric if deposition lasts longer, producing SiO2 films with a homogeneous composition throughout the whole dielectric layer. It is shown that the transitory early deposition regime is structurally sensitive to the nature of the substrate. Cathodoluminescence is used to show that the surface carrier recombination properties are altered mostly during this singular early stage of photodeposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105572
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  • 5
    Electronic Resource
    Electronic Resource
    Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator-semiconductor devices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1291-1293 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first stage of chemical vapor deposition of SiO2 from SiH4 and O2 on InP has been investigated. SiH4 is shown to interact only with an oxidized InP surface. It plays the part of an interface deoxidizing agent, restoring the covalent bonding of surface InP atoms. Oxygen originally bonded to InP becomes bonded to the silicon deposit in silica-like bonds. This phenomenon has been used as an in situ surface cleaning step in the processing of metal-insulator-semiconductor InP structures. It leads to a strong decrease of the hysteresis in capacitance-voltage curves, demonstrating improvement of the interface properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100426
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  • 6
    Electronic Resource
    Electronic Resource
    Solid phase recrystallization of implanted III-V semiconductors under uniaxial stress (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2227-2229 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of mechanical stress on solid phase epitaxial recrystallization of implanted amorphous III-V semiconductor layers is studied for the first time. A dual approach is used, involving either direct application of uniaxial stress on whole GaAs samples or the use of strained InGaAs layers deposited on InP substrates with indium composition as a stress control parameter. Observations show that with high applied stresses up to a few kilobars recrystallization kinetics remain unaltered. While homogeneous coherent strain does not bear any influence on interface roughness during regrowth, inhomogeneous strains due to defects greatly enhance the growth front roughness. This last result is interpreted in terms of defects acting as generating sources of additional defects during recrystallization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99540
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  • 7
    Electronic Resource
    Electronic Resource
    Impurity-induced enhancement of the growth rate of amorphized silicon during solid-phase epitaxy: A free-carrier effect (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 432-438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The study of solid-phase epitaxy in ion-implanted amorphized silicon is presented via optical reflectivity measurements. The effect of impurities on recrystallization is studied in detail through accurate measurements of growth rate. Enhancement of the growth rate and decrease of the activation energy are shown. These parameters are studied as a function of the impurity concentration. This phenomenon is understood in terms of an original model which introduces band bending and an electric field at the disordered layer-crystalline substrate interface. The electric field acts on recrystallization through the enhancement of defect migration at the interface. The agreement of the model with experimental results is shown to be excellent, and a parallel is drawn with the phenomenon of enhanced dislocation mobility with doping, which behaves in a strikingly similar way.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336649
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  • 8
    Electronic Resource
    Electronic Resource
    Direct measurement of solid-phase epitaxial growth kinetics in GaAs by time-resolved reflectivity (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3094-3096 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Complete solid-phase epitaxial regrowth of ion-implanted layers in GaAs has been obtained in the temperature range 150–400 °C. Implantation of tellurium at an energy and dose slightly greater than the amorphization threshold was used to produce an amorphous layer in the near-surface region of the GaAs samples. Complete crystallization was achieved over the entire temperature range using a resistively heated sample holder and cw laser irradiation. In situ time-resolved optical reflectivity measurements were used to observe and measure the epitaxial growth rate of the process. It has been found that the solid-phase epitaxy process follows an activation law whose activation energy is 1.6 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335810
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  • 9
    Electronic Resource
    Electronic Resource
    Interface structure evolution and impurity effects during solid-phase-epitaxial growth in GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1352-1358 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time-resolved reflectivity technique is shown to be able to characterize interface structure during solid-phase epitaxy in GaAs. A detailed study of interface structure during regrowth and recrystallization kinetics is made for different implanted impurities and implantation parameters in GaAs. It is shown that the interface roughens on a macroscopic scale during the regrowth process and that this evolution has an intrinsic character in the implanted material. Activation energy is shown to be independent of implantation conditions. Substitutional impurity implantation does not produce variations in regrowth kinetics whereas argon implantation drastically decreases the growth rate. Results are interpreted in terms of interface roughening due to nonrelaxing atomic configurations in the disordered phase. The evolution of the interface has been related to an increase of disorder in the regrown layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337309
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  • 10
    Electronic Resource
    Electronic Resource
    cw laser processing of semiconductor surfaces (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2444-2446 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The usefulness of cw laser irradiation for semiconductor surface processing is evaluated. While perfect surface cleaning has not yet been obtained, surface annealing of silicon by this technique equals and even beats classical techniques or pulsed-laser irradiation. cw laser "writing'' of fine surface patterns is also demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336347
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