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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 5455-5461 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Elastic electron scattering cross sections from 5–30 eV are reported for the molecules C2H4, C2H6, C3H8, Si2H6, and GeH4, obtained using an implementation of the Schwinger multichannel method for distributed-memory parallel computer architectures. These results, obtained within the static-exchange approximation, are in generally good agreement with the available experimental data. These calculations demonstrate the potential of highly parallel computation in the study of collisions between low-energy electrons and polyatomic gases. The computational methodology discussed is also directly applicable to the calculation of elastic cross sections at higher levels of approximation (target polarization) and of electronic excitation cross sections.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 2998-3001 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present cross sections and asymmetry parameters for photoionization of the 1t2 orbital of CH4 using static-exchange continuum orbitals of CH+4 to represent the photoelectron wave function. The calculations are done in the fixed-nuclei approximation at a single internuclear geometry. To approximate the near-threshold behavior of these cross sections, we assumed that the photoelectron spectrum is a composite of three electronic bands associated with the Jahn–Teller components of the distorted ion. The resulting cross sections reproduce the sharp rise seen at threshold in the experimental data and are in good agreement with experiment at higher energy. The agreement between the calculated and measured photoelectron asymmetry parameters is, however, less satisfactory.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 2362-2366 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The iterative Schwinger variational method is used to obtain cross sections and photoelectron asymmetry parameters for photoionization of the three outermost valence orbitals (1b1, 3a1, and 1b2) of H2O for photon energies from near threshold to 50 eV. A comparison of these calculated results with available experimental data is encouraging.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4936-4942 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The coefficient of thermal expansion (CTE), biaxial modulus, and stress of some amorphous semiconductors (a-Si:H, a-C:H, a-Ge:H, and a-GeCx:H) and metallic (Ag and Al) thin films were studied. The thermal expansion and the biaxial modulus were measured by the thermally induced bending technique. The stress of the metallic films, deposited by thermal evaporation (Ag and Al), is tensile, while that of the amorphous films deposited by sputtering (a-Si:H, a-Ge:H, and a-GeCx:H) and by glow discharge (a-C:H) is compressive. We observed that the coefficient of thermal expansion of the tetrahedral amorphous thin films prepared in this work, as well as that of the films reported in literature, depend on the network strain. The CTE of tensile films is smaller than that of their corresponding crystalline semiconductors, but it is higher for compressive films. On the other hand, we found out that the elastic biaxial modulus of the amorphous and metallic films is systematically smaller than that of their crystalline counterparts. This behavior stands for other films reported in the literature that were prepared by different techniques and deposition conditions. These differences were attributed to the reduction of the coordination number and to the presence of defects, such as voids and dangling bonds, in amorphous films. On the other hand, columnar structure and microcrystallinity account for the reduced elasticity of the metallic films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3797-3799 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of light-induced electron spin resonance (LESR) in amorphous hydrogenated germanium. Two new lines with zero crossings near g=2.01 and g=2.03 were detected and ascribed to electrons and holes in the conduction- and valence-band-tail states, respectively. The ratio between the LESR spin densities of both lines is approximately one, suggesting the absence of spin pairing, charge defect creation, or LESR of dangling bonds. The growth and decay spectra exhibit dispersive behavior with a dispersion parameter ∼0.5. The decay spectrum is best fit assuming bimolecular recombination. The LESR spin density depends weakly on the photogeneration rate as a sublinear power law. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 10566-10570 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report elastic integral, differential, and momentum transfer cross sections from 10 to 30 eV for electron scattering by SnH4 and PbH4, obtained using the Schwinger Multichannel Method with Pseudopotentials [M. H. F. Bettega, L. G. Ferreira, and M. A. P. Lima, Phys. Rev. A 47, 1111 (1993)]. With these molecules we close the series of XH4 molecules, with X=C, Si, Ge, Sn, Pb. We compare the present results with those obtained previously for CH4, SiH4, and GeH4. We find similarities in the cross sections for SiH4, GeH4, SnH4, and PbH4 and a distinctive behavior of CH4. We discuss the role of the center atom size in the scattering process. To our knowledge this is the first ab initio calculation of the SnH4 and PbH4 electron scattering cross sections. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 89 (1985), S. 1854-1855 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 91 (1987), S. 4087-4091 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 1029-1033 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We calculated integral and differential cross sections for scattering of low-energy electrons by two groups of hydrides from 10 to 30 eV. The first group is composed by the hydrides of elements in the same column of the Periodic Table and includes PH3, AsH3, and SbH3. The second group is formed by hydrides in the same row and includes SnH4, SbH3, TeH2, and HI. The calculations employed the Schwinger multichannel method with norm-conserving pseudopotentials [M.H.F. Bettega, L.G. Ferreira, and M.A.P. Lima, Phys. Rev. A 47, 1111 (1993)]. Our goal is to find similarities and differences in the cross sections in these two groups. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1365-3083
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In this work, the authors analysed T and B lymphocyte subsets and cytokine production in the spleen of BALB/c mice during polyclonal lymphocyte activation (primary infection) and parasite-specific response to Plasmodium chabaudi chabaudi (secondary infection). The secondary response was evaluated in fully immunoprotected animals, 60 days after a chloroquine-cured infection. The authors observed that in polyclonal lymphocyte activation antibody-secreting cells of all isotypes increased, with predominance of IgG2a and IgG3 classes. At that time, IFN-γ was largely produced, but IL-4/IL-5 were just slightly enhanced. In mice re-infected after 60 days, the Ig-isotype pattern was restricted to IgG1 and only IL–4/IL-5 were produced. In both responses, however, the levels of IL-2 were greatly reduced, while those of IL-10 were enhanced to similar levels. The different involvement of Th1 and Th2 cells in both responses was confirmed through analysis of CD45RB expression by CD4+ cells. The authors observed that CD45RBhigh cells were the major CD4+ subpopulation in primary infected mice, while CD45RBlow cells predominated in 60 days re-infected animals. Moreover, the great majority of activated (large) CD4+ cells in the primary infection belonged to the CD45RBhigh subset, while after re-infection most of the CD4+ large had a CD45RBlow phenotype.
    Type of Medium: Electronic Resource
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