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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7635-7639 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of LiNbO3 doped with up to 25 mol % of MgO were successfully grown. No precipitates were discovered. In studies of the change of the Curie temperatures and Raman spectra with composition, an abrupt change was observed near the composition of 10 mol % of MgO. From the model of Gallagher relating Tc and cation vacancies and the cation occupation calculated by x-ray data, it is proposed that the Mg atoms replace the Nb atoms at Li sites. When the Nb atoms are exhausted, the Mg atoms replace the Li sites and Li vacancies are created. The amount of Mg in the LiNbO3 structure could be predicted better from the 151 cm−1 peak shift in Raman spectra than from Tc.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 87 (2004), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The effect of dopants and processing conditions on the dielectric properties of base-metal-electroded materials was investigated. BaTiO3 materials simultaneously doped with MgO and Y2O3 additives can achieve small capacitance variation (ΔC/C), which meets the X7R specification, when the proportion of additives is abundant enough and the materials are not over-fired. Presumably, small ΔC/C values of thus obtained materials are the result of the formation of core–shell structure, which requires stringent control of material processing conditions. In contrast, X7R-type materials can be obtained in a much wider processing window, when prepared by mixing two BaTiO3 materials of suitable dielectric constant–temperature (K–T) characteristics. Duplexed materials prepared from these two end-point BaTiO3 materials with ratios ranging from 3:1 to 1:2 exhibit K–T behavior within the X7R specification, provided that one of the components possesses flat K–T behavior. Moreover, the dielectric properties of these materials were simulated using a simplified microstructural model. Simulation results indicate that the effective dielectric constant of core–shell materials, (Ke)CS, varies significantly not only with the dielectric properties of cores and shells, but also with the shell-to-core thickness ratio, whereas the effective dielectric constant of duplexed materials, (Ke)D, can be maintained at a very small ΔC/C value for a wide range of end-point constituent ratios, which agrees very well with the measured K–T properties for the materials.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The microstructure and nonlinear current-voltage characteristics of Mn3O4-doped ZnO-V2O5 ceramics, microwave-sintered at 800°-1200°C for 10 min, have been investigated. A high density (96% of the theoretical density) has been achieved. The incorporation of Mn3O4 additives does not significantly alter the densification behavior of the ZnO-V2O5 materials, but rather pronouncedly increases the nonlinear coefficient (α= 23.5) and markedly suppresses their leakage current density (JL= 2.4 10-6 A/cm2). On the other hand, the intrinsic properties of the materials, including the Schottky barrier height (Phib) and the donor density (Nd), are only moderately modified; that is, Phib= 1.16 eV and Nd= 5.4 1017/cm3. X-ray diffractometry analyses and energy-dispersive X-ray microanalyses (via scanning electron microscopy) indicate that the V2O5 species facilitate the densification and the development of microstructure via the formation of a liquid phase (Zn3(VO4)2) along the grain boundaries, whereas the Mn3O4 species markedly enhance the nonohmic behavior of the ZnO-V2O5 materials by forming the surface states along the grain boundaries.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4984-4989 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ambient gas pressure in pulsed laser deposition process has been observed to significantly modify the lattice parameters of (Sr1−xBax)TiO3 thin films. The lattice parameters a0 of the films deposited under low ambient pressure regime (P≤0.01 mbar) were larger than those found on the films grown under high ambient pressure regime (P≥0.1 mbar), regardless of the thin film composition (i.e., x value), substrate materials (Pt/Si or Si), or ambient gas species (O2 or N2). It is proposed from these observations that the large lattice parameters a0 of the films grown under low-pressure environment result from higher concentration of vacancies, which, in turn, are induced by the bombardment of energetic species ejected by laser beams. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4553-4559 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we obtain (Ba0.7Pb0.3)TiO3 materials possessing double critical temperature Tc in resistivity–temperature (ρ–T) behavior by microwave sintering at 1050–1080 °C for 5 min. The cooling-rate control and postannealing processes modify the relative magnitudes of low- and high-Tc resistivity jumps without altering the Tc values. The donor Ed and trap Es levels of those materials are estimated to be Ed(approximately-equal-to)0.05–0.07 eV and Es(approximately-equal-to)1.07–1.32 eV. According to experimental results the voltage sensitivity and transient responsivity of the current passing through double-Tc materials are observed to be superior to those of single-Tc materials prepared by the conventional furnace sintering method. Also, the double-Tc characteristics are attributed to the dual phases with a core-shell structure. Moreover, the change in the relative proportion of the two phases accounts for the influence of post-heat treatment processes on the materials' ρ–T behavior. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 423-427 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resistivity-temperature (ρ-T) properties of the (Sr0.2Ba0.8)TiO3 materials densified by the microwave sintering process were investigated. Neither the sintering temperature (1100–1180 °C) nor the soaking time (10–40 min) in this process exert a significant influence on the positive temperature coefficient of resistivity behavior of the as-sintered samples. Contrarily, reducing the cooling rate from 154 °C/min to 4 °C/min or post-annealing the samples at 1250 °C for 2 h would increase the maximum resistivity (ρmax) more than three orders of magnitude. Consequently, the resistivity jump with the maximum to minimum resistivity ratio ρmax/ρmin≈107 has been achieved. The increase in maximum resistivity by these processes is ascribed to the increase in cationic vacancies, which subsequently act as effective electronic traps. The trap level (Ese) of the cationic vacancies is estimated from the Arrhenius plots of maximum resistivity (ρmax) and temperature (Tmax) to be Ese≈1.5–2.0 eV. On the other hand, the ρ-T curves in the T(approximately-greater-than)Tmax regime estimate the intrinsic trap level (Esi) of the (Sr0.2Ba0.8)TiO3 materials to be Esi≈2.46–2.51 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3310-3313 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Substrate materials used for growing diamond films were observed to modify thin films' electron field emission properties significantly. Using heavily doped silicon (LR-Si) as a substrate lowered the turn-on field from (E0)Si=14.4 V/μm to (E0)LR-Si=9.7 V/μm and increased the emission current density from (Je)Si=4 μA/cm2 to (Je)LR-Si=40 μA/cm2 (at 16 V/μm). However, electron field emission properties can be further improved only by using Au precoatings to modify the characteristics of interfacial layer. The turn-on field was lowered further to (E0)Au–Si=8.7 V/μm and emission current density was increased further to (Je)Au–Si=400 μA/cm2 (at 16 V/μm). Secondary ion mass spectroscopic examination indicated that the main interaction is the outward diffusion of Au species into amorphous carbon layer, lowering the resistivity of this interfacial layer. The electrons can therefore be transported easily from Si substrate across the interfacial layer to the diamonds and subsequently field emitted. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1555-1557 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A diamond film consisting of almost 100% [001] grains can be synthesized at a fast rate (∼ 3 μm/h) by a two-step process. First, the nuclei are formed under −160 V dc bias with 3 mol % CH4/H2 at 900 °C substrate temperature and then the films are grown under −100 V dc bias with around 5–6 mol % CH4/H2 at the same temperature. The nucleation of the diamond is enhanced by using bias voltage. The a and b axis of [001] textured diamond films grown under large bias voltage are aligned with a and b axes of silicon, viz. (100)diamond(parallel)(100)Si and [110]diamond(parallel)[110]Si. The effect of bias voltage on the growth behavior of the diamond films is accounted for by the suppression of the growth of the non-[001] grains due to the electron emission under bias. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3285-3287 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we observed that the ferroelectric properties of (Pb1−xLax)TiO3, (PLT) thin films deposited on Pt/Ti/Si substrates using SrRuO3 as a buffer layer change markedly with the substrate temperature and the composition. All the films are perovskite with no secondary phases when deposited at 500–600 °C. However, only the films deposited below 520 °C possess a satisfactory small leakage current density, for example, JL≤10−7 A/cm2, under a 50 kV/cm applied field. Both PLT10 (x=0.10) and PLT5 (x=0.05) thin films thus obtained possess large pyroelectric coefficient (p=0.009–0.018 °C−1). However, the PLT10 thin films show pyroelectric properties markedly superior to the PLT5 thin films, although the PLT5 thin films own much better ferroelectric properties. This phenomenon is explained by the lower Curie temperature (Tc) of the PLT10 materials. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2505-2510 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristics of LaNiO3 (LNO) thin films deposited by rf sputtering process were compared with that prepared by pulsed laser deposition (PLD) process. rf sputtered LNO films were [200] preferentially oriented with a low surface resistivity (ρs=0.55 mΩ cm) and the PLD deposited films were [110] predominated with a slightly larger surface resistivity (ρs=6.38 mΩ cm). Using Pt coating as underneath layer markedly reduced the surface resistivity (ρs=0.05 mΩ cm) without modifying the texture characteristics of the LNO layers. PLZT films subsequently deposited on LNO layers inherited the texture characteristics of the underlying LNO layers. Ferroelectric properties of PLZT films were optimized when using LNO–Pt double layers as bottom electrodes. The remanent polarization and coercive force obtained were Pr=14.9 μC/cm2 and Ec=3.5 kV/cm, respectively. © 1996 American Institute of Physics.
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