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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1442-1444 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excited carrier dynamics in GaAs and Al0.2Ga0.8As are investigated using femtosecond pump and continuum probe techniques. We observe absorption spectral hole burning arising from excited carriers generated by transitions from the split-off band as well as the heavy- and light-hole bands. Transient absorption saturation measurements indicate that the initial nonthermal carrier distribution thermalizes on a time scale of several tens of femtoseconds.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 161-163 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Femtosecond transient absorption saturation measurements are used to investigate the scattering of optically excited carriers in AlGaAs. With pulses as short as 35 fs at 1.98 eV, scattering times ranging from 13 to 330 fs are observed in samples of AlxGa1−xAs with x=0, 0.1, 0.2, 0.3, and 0.4. A dramatic decrease in the rate of carrier scattering out of the initial optically excited states is observed with increasing Al concentration.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1913-1914 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical storage with long-term stability and up to third-order diffraction have been observed in a liquid-crystal polymer film by two-wave mixing. After turning off the pump beam, the diffraction of the probe beam remains. While the probe beam is turned off, the intensities of the diffraction beams of the pump beam does not decrease significantly. A brilliant hologram spot is observed on the film during the experiments and the trace of the spot can be maintained over 120 days without obvious change. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    International journal of fracture 28 (1985), S. R79 
    ISSN: 1573-2673
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    International journal of fracture 56 (1992), S. 85-92 
    ISSN: 1573-2673
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The shear stress distribution for the notch problem of plane elasticity in the sliding mode case is investigated in this paper. Particular features of the shear stress distribution beneath the crown point of notch are analyzed by means of the Muskhelishvili method [1]. It is found that the maximum shear stress σxy, max is always reached at some point below the surface of the notch. The smaller the radius ρ of the notch, the larger is the maximum shear stress σxy, max. A relation between σxy, max and stress intensity factor K II of the corresponding crack problem is found to be Several specific examples are given to prove the validity of the obtained relation. % MathType!MTEF!2!1!+-% feaafiart1ev1aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn% hiov2DGi1BTfMBaeXafv3ySLgzGmvETj2BSbqefm0B1jxALjhiov2D% aebbfv3ySLgzGueE0jxyaibaiGc9yrFr0xXdbba91rFfpec8Eeeu0x% Xdbba9frFj0-OqFfea0dXdd9vqaq-JfrVkFHe9pgea0dXdar-Jb9hs% 0dXdbPYxe9vr0-vr0-vqpWqaaeaabiGaciaacaqabeaadaqaaqGaaO% qaaiaadUeadaWgaaWcbaGaaeysaiaabMeaaeqaaOGaeyypa0ZaaSaa% aeaacaaIZaWaaOaaaeaacaaIZaGaeqiWdahaleqaaaGcbaGaaGOmaa% aadaWfqaqaaiGacYgacaGGPbGaaiyBaaWcbaGaeqyWdiNaeyOKH4Qa% aGimaaqabaGcdaGcaaqaaiabeg8aYjabeo8aZbWcbeaakmaaBaaale% aacaWG4bGaamyEaiaacYcaciGGTbGaaiyyaiaacIhadaahaaadbeqa% amXvP5wqonvsaeHbuLwBLnhiov2DGi1BTfMBG0evGueE0jxyGi0BSr% gaiuaacqWFUaGlaaaaleqaaaaa!6261!\[K_{{\text{II}}} = \frac{{3\sqrt {3\pi } }}{2}\mathop {\lim }\limits_{\rho \to 0} \sqrt {\rho \sigma } _{xy,\max ^. } \]
    Type of Medium: Electronic Resource
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