Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 3817-3819
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial zinc oxide films have been prepared on gallium nitride (0002) substrates by cathodic electrodeposition in an aqueous solution containing a zinc salt and dissolved oxygen at 85 °C. The films have the hexagonal structure with the c axis parallel to that of GaN and the [100] direction in ZnO parallel to the [100] direction in GaN in the (0002) basal plane. The structural quality is attested by the values of the full width at half maximum in θ/2θ x-ray diffraction (XRD) diagrams [0.07° for the (0002) peak] and in five circles XRD diagrams [0.74° for the ZnO (101¯1) planes compared to 0.47° for the GaN (101¯1) planes]. The morphology of the layers has been studied by scanning electron microscopy. Before coalescence, arrays of epitaxial single crystalline hexagonal columns are observed with a low dispersion in size, indicating instantaneous tridimensional nucleation. Preliminary results on luminescence properties of the films before and after annealing are presented. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125466
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