Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 3320-3322
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this work, the realization of AlxGa1−xAs/GaAs two-step barrier diode is presented. Experimental observation on the current–voltage characteristics of the two-step barrier diode is reported. At both room temperature and 77 K, it shows a strong negative differential resistance under forward bias while no similar phenomenon was observed under reverse bias. Such an asymmetric current–voltage characteristic would open the possibility of negative differential resistance in an ac field in the absence of a dc bias. Theoretical simulation and experimental current–voltage characteristics are compared and discussed. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116044
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |