ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Nonsymmetric short-period GaAs/AlAs superlattices, for which the well thickness is at least a factor of 2 larger than the barrier thickness, have been shown to exhibit a direct band gap for any well thickness. These superlattices are characterized by an enhanced intensity of the luminescence as compared to their symmetric indirect-gap counterparts with the same well width, and, thus, may be used as light-emitting devices, in particular, as low-threshold lasers in the red visible spectrum. This conjecture is supported by the observation of stimulated emission at T=80 K for a GaAs/AlAs superlattice with six monolayers well and three monolayers barrier width. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1379985
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