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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2442-2444 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon gratings with periods from 180 to 550 nm were fabricated with a laser ablation technique in which the interference fringe from an intense and coherent ultraviolet laser at 266 nm directly melted silicon surface. The scanning electron microscopy and atomic force microscopy pictures showed that the corrugations were in quite good quality with the depth as large as 70 nm. The measurement of grating period dependence on temperature showed that rapid thermal annealing could release the thermal strains, which were built during the melting and cooling process in laser ablation, and make the grating period variation more regular. Also, with an air gap between the sample and prism surfaces, the fabricated gratings had weaker thermal strains and more regular temperature dependencies. All the measurement results of temperature dependence were consistent with theoretical predictions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1634-1636 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The silicon doping of GaAs grown by metalorganic chemical vapor deposition using a silane source has been investigated. The amphoteric property of the Si dopant is demonstrated for the first time. It is found that the doping characteristics are strongly temperature dependent. At the growth temperature higher than 600 °C and the arsine to trimethylgallium mole ratio (AsH3/TMG) around 217, the conduction is n type and the carrier concentration increases as the temperature increases. On the other hand, when the growth temperature is lower than 600 °C, the carrier concentration increases as the temperature decreases and the conduction becomes p type at 400–450 °C. In addition, when the AsH3/TMG mole ratio is below 50, the Si-doped GaAs layers also become p type. The GaAs light-emitting diode is thus successfully fabricated using a single silicon dopant.
    Type of Medium: Electronic Resource
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