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  • 1
    Electronic Resource
    Electronic Resource
    Investigation of the thermal degradation mechanism for Cu/Au Schottky contacts to the InGaP layer (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1349-1353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal degradation mechanism of Cu/Au contacts to the InGaP layer has been investigated using current–voltage measurement, x-ray diffractometry (XRD) measurement and cross-sectional transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS). The diffraction peaks of Cu, Au, and InGaP could be observed from the XRD measurement and an evident interface of Cu/InGaP also could be found from the cross-sectional microstructure. The apparent interface of Cu/InGaP was responsible for the high performance of Cu/Au Schottky contacts to the InGaP layer. The thermal stability endurance for the high performance of the Schottky contact can be maintained up to 450 °C. However, the Schottky contact performance became inferior at temperatures higher than 450 °C. At a temperature of 500 °C, the peaks of Cu and Au disappeared, the XRD measurement revealing the diffraction peaks of CuP2 and Cu3Au2 alloys. According to the cross-sectional microstructure and the EDS measurements at 500 °C, the Cu layer had been released, penetrated into the InGaP layer, and outdiffused to the Au layer to form an intermetallic layer. As a result, the thermal degradation mechanism is attributed to the release of the Cu layer and the indiffusion of Cu element to the InGaP layer. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428789
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  • 2
    Electronic Resource
    Electronic Resource
    Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2573-2575 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using capacitance–voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)2Sx treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)2Sx. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)2Sx-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga–S bonds. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410358
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  • 3
    Electronic Resource
    Electronic Resource
    Microstructure evolution and failure mechanism for Cu/Au Schottky contacts to InGaP layer (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 987-991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the microstructure evolution and failure mechanism of Cu/Au Schottky contacts to the InGaP layer using x-ray diffractometry (XRD) and transmission electron microscopy (TEM). At annealing temperatures varying from 500 to 600 °C for 1 min, the diffraction peak of the CuP2 alloy can be found from XRD measurement. This indicates that the Cu is unstable, because it diffused into the InGaP layer and formed a CuP2 alloy at annealing temperatures higher than 500 °C. Furthermore, when the rapid thermal annealing temperature reached 500 °C, seen from a typical cross-sectional structure in the TEM measurements, we also found a sublayer in the originally grown InGaP layer. This sublayer was identified as a mixed structure of InGaP and CuP2, the thickness of which increased with a rise in annealing temperature. Moreover, the failure mechanism of Cu/Au Schottky contacts to the InGaP layer could be determined from the evolution of the thickness of the sublayer at an annealing temperature of 500 °C for various times. At the annealing temperature of 500 °C, the activation energy between the Cu and InGaP semiconductor was 0.93 eV and the diffusion constant was 1.37×103 nm2/s. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1487439
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  • 4
    Electronic Resource
    Electronic Resource
    A Silicon Oxide Hard Coating Deposited on Flexible Substrate by TMS - PECVD System (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 505-507 (Jan. 2006), p. 439-444 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A hard coating silicon oxide film was deposited on flexible substrates by a PECVDsystem. Tertramethylsilane (TMS) and oxygen were employed as raw materials. Surface roughness and hardness of these films deposited under various TMS/O2 gas flow ratio, rf power and chamber pressure were investigated. At adequate fabricated conditions, the original surface roughness of PMMA (~ 3.36 nm) and PC (~ 1.38 nm) substrates was markedly flatted to 1.52 and 0.39 nm,respectively. Meanwhile, the surface hardness of coated PMMA and PC substrates was also enhanced to 6.077 GPa and 3.978 GPa, respectively. The hardness of silicon oxide film deposited by TMS-PECVD system was superior to silicon oxide films prepared from e-beam evaporation and dipping technologies
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/11/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.505-507.439.pdf
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