Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Study on bias-enhanced nucleation of diamonds by simulating the time dependence of bias current (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3934-3936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of bias-enhanced nucleation (BEN) of diamonds in microwave plasma-enhanced chemical vapor deposition were investigated. During a BEN step, the increase of bias current was proportional to the area covered by diamond nuclei. This result provided information regarding the kinetics of nucleation. Avrami's kinetics were carefully introduced to describe the time dependence of the bias current. Our analysis shows that the decrease of activation energy (0.08–0.18 eV) of atomic diffusion increased as the negative bias voltage is increased from −80 to −120 V. The mechanism of enhancement of atomic diffusion by ion bombardment in the incubation period was also presented. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1452780
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Effects of ambient gas pressure on (1−x) SrTiO3-xBaTiO3 films prepared by pulsed laser deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4984-4989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ambient gas pressure in pulsed laser deposition process has been observed to significantly modify the lattice parameters of (Sr1−xBax)TiO3 thin films. The lattice parameters a0 of the films deposited under low ambient pressure regime (P≤0.01 mbar) were larger than those found on the films grown under high ambient pressure regime (P≥0.1 mbar), regardless of the thin film composition (i.e., x value), substrate materials (Pt/Si or Si), or ambient gas species (O2 or N2). It is proposed from these observations that the large lattice parameters a0 of the films grown under low-pressure environment result from higher concentration of vacancies, which, in turn, are induced by the bombardment of energetic species ejected by laser beams. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363464
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Double critical temperature characteristics of semiconducting (Ba0.7Pb0.3)TiO3 materials prepared by microwave sintering (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4553-4559 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we obtain (Ba0.7Pb0.3)TiO3 materials possessing double critical temperature Tc in resistivity–temperature (ρ–T) behavior by microwave sintering at 1050–1080 °C for 5 min. The cooling-rate control and postannealing processes modify the relative magnitudes of low- and high-Tc resistivity jumps without altering the Tc values. The donor Ed and trap Es levels of those materials are estimated to be Ed(approximately-equal-to)0.05–0.07 eV and Es(approximately-equal-to)1.07–1.32 eV. According to experimental results the voltage sensitivity and transient responsivity of the current passing through double-Tc materials are observed to be superior to those of single-Tc materials prepared by the conventional furnace sintering method. Also, the double-Tc characteristics are attributed to the dual phases with a core-shell structure. Moreover, the change in the relative proportion of the two phases accounts for the influence of post-heat treatment processes on the materials' ρ–T behavior. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363437
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electrical characteristics of (Sr0.2Ba0.8)TiO3 positive temperature coefficient of resistivity materials prepared by microwave sintering (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 423-427 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resistivity-temperature (ρ-T) properties of the (Sr0.2Ba0.8)TiO3 materials densified by the microwave sintering process were investigated. Neither the sintering temperature (1100–1180 °C) nor the soaking time (10–40 min) in this process exert a significant influence on the positive temperature coefficient of resistivity behavior of the as-sintered samples. Contrarily, reducing the cooling rate from 154 °C/min to 4 °C/min or post-annealing the samples at 1250 °C for 2 h would increase the maximum resistivity (ρmax) more than three orders of magnitude. Consequently, the resistivity jump with the maximum to minimum resistivity ratio ρmax/ρmin≈107 has been achieved. The increase in maximum resistivity by these processes is ascribed to the increase in cationic vacancies, which subsequently act as effective electronic traps. The trap level (Ese) of the cationic vacancies is estimated from the Arrhenius plots of maximum resistivity (ρmax) and temperature (Tmax) to be Ese≈1.5–2.0 eV. On the other hand, the ρ-T curves in the T(approximately-greater-than)Tmax regime estimate the intrinsic trap level (Esi) of the (Sr0.2Ba0.8)TiO3 materials to be Esi≈2.46–2.51 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360620
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Deposition of diamond films on SiO2 surfaces using a high power microwave enhanced chemical vapor deposition process (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 486-491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamonds were successfully nucleated on SiO2-coated silicon substrates using a high power microwave plasma enhanced chemical vapor deposition process. Nucleation rates on SiO2 surfaces (i.e., 0.5×1010 cm−2) were, however, still smaller than those on Si surfaces (i.e., 1.0×1010 cm−2). The major advantage in using high power microwaves was revealed by optical emission spectroscopy to be that the atomic C and H species produced are more abundant and energetic. Therefore, the negative bias effect is enabled and the formation of sp3 bonds is enhanced. The nucleation of diamonds on SiO2 surface is thus made possible. The growth of diamonds behaved similarly on the prenucleated surface, regardless of the nature of the substrates. Diamonds were of single grain columnar structure with random orientation when deposited without bias and were of multi-grain columnar structure with [111] or [001] preferred orientation when deposited under −100 V dc bias. Multi-grain columnar structure was ascribed to the induction of secondary nucleation at the presence of bias voltage. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364104
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Improvement of (Pb1−xLax)(ZryTi1−y)1−x/4O3 ferroelectric thin films by use of SrRuO3/Ru/Pt/Ti bottom electrodes (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1182-1184 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work deposits (Pb1−xLax)(ZryTi1−y)1−x/4O3 (PLZT) thin films, possessing good ferroelectric properties (Pr=14.4 μC/cm2), on Pt/Ti/SiO2/Si substrates, using SrRuO3 perovskite as bottom electrodes. Precoating a metallic Ru layer on Pt/Ti/SiO2/Si substrates prior to depositing SrRuO3 bottom electrode further improves the film electrical properties. The optimum ferroelectric properties achieved are Pr=25.6 μC/cm2, Ec=47.1 kV/cm, and εr=1204. Analyzing the elemental depth profiles using secondary ions mass spectroscopy reveals that the presence of the metallic Ru layer effectively suppresses the outward diffusion of Ti and Si species. The interdiffusion between the SrRuO3 layer and the subsequently deposited PLZT is also substantially reduced, an effect that is presumed to be the primary factor in improving ferroelectric properties for PLZT thin films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121007
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Effect of substrate materials on the electron field emission characteristics of chemical vapor deposited diamond films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3310-3313 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Substrate materials used for growing diamond films were observed to modify thin films' electron field emission properties significantly. Using heavily doped silicon (LR-Si) as a substrate lowered the turn-on field from (E0)Si=14.4 V/μm to (E0)LR-Si=9.7 V/μm and increased the emission current density from (Je)Si=4 μA/cm2 to (Je)LR-Si=40 μA/cm2 (at 16 V/μm). However, electron field emission properties can be further improved only by using Au precoatings to modify the characteristics of interfacial layer. The turn-on field was lowered further to (E0)Au–Si=8.7 V/μm and emission current density was increased further to (Je)Au–Si=400 μA/cm2 (at 16 V/μm). Secondary ion mass spectroscopic examination indicated that the main interaction is the outward diffusion of Au species into amorphous carbon layer, lowering the resistivity of this interfacial layer. The electrons can therefore be transported easily from Si substrate across the interfacial layer to the diamonds and subsequently field emitted. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365639
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Pyroelectric properties of (Pb1−xLax)TiO3 thin films deposited using SrRuO3 as a buffer layer (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3285-3287 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we observed that the ferroelectric properties of (Pb1−xLax)TiO3, (PLT) thin films deposited on Pt/Ti/Si substrates using SrRuO3 as a buffer layer change markedly with the substrate temperature and the composition. All the films are perovskite with no secondary phases when deposited at 500–600 °C. However, only the films deposited below 520 °C possess a satisfactory small leakage current density, for example, JL≤10−7 A/cm2, under a 50 kV/cm applied field. Both PLT10 (x=0.10) and PLT5 (x=0.05) thin films thus obtained possess large pyroelectric coefficient (p=0.009–0.018 °C−1). However, the PLT10 thin films show pyroelectric properties markedly superior to the PLT5 thin films, although the PLT5 thin films own much better ferroelectric properties. This phenomenon is explained by the lower Curie temperature (Tc) of the PLT10 materials. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121625
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Ferroelectric properties of (Pb0.97La0.03)(Zr0.66Ti0.34)0.9875O3 films deposited on Si3N4-coated Si substrates by pulsed laser deposition process (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 46-48 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (Pb0.97La0.03)(Zr0.66Ti0.34)0.9875O3, PLZT, thin films deposited on either LaNiO3 (LNO) or LNO/Pt coated Si3N4/Si substrates, possessing good ferroelectric properties, were successfully obtained by the pulsed laser deposition process. Using LNO/Pt as double layer electrodes not only resulted in PLZT films with superior electric properties, but also of better handling endurance. The former is attributed to the low surface resistivity of electrode materials (i.e., ρLNO/Pt=0.5 mΩ cm) due to the bypassing effect of the Pt layer, whereas the latter is ascribed to the induction of compressive stress on PLZT and LNO layers due to a relatively larger thermal expansion coefficient (CTE) of the Pt layer. The ferroelectric properties of (PLZT )LNO/pt films were Pr=16.5 μC/cm2 and Ec=63.5 kV/cm, while the dielectric constant and leakage current were K=1.028 and Je≤8×10−6 A/cm2 (under 150 kV/cm), respectively. Their fatigue life was longer than 2×109cycles under action of 300 kV/cm pulse. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119300
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    (Pb1−xLax)(Zr1−yTiy)O3 patterns on Pt-coated silicon prepared by pulsed laser deposition process (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2647-2649 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric (PbxLa1−x)(ZryTi1−y)O3 (PLZT) thin films on Pt(Si) substrates have been synthesized using a two-step process, which includes low temperature pulsed laser deposition (PLD) and high temperature rapid thermal annealing (RTA). Pure perovskite PLZT phase can be achieved by RTA at 550 °C (1–60 s), provided that the crystalline SrRuO3 layer is used as buffer layer on top of Pt(Si) substrates. Interdiffusion between layers is efficiently suppressed. Increasing the RTA duration insignificantly modifies the crystalline structure and the microstructure of the PLZT/SRO/Pt(Si) films, but significantly improves the ferroelectric properties and leakage characteristics of the films. The electrical properties, which are optimized for the films RTA at 550 °C (30 s), are Pr=19 μC/cm2, Ec=70 kV/cm, and JL〈10−5 A/cm2 for Ea〈450 kV/cm applied field. A self-aligned pattern consisting of crystalline PLZT dots with good ferroelectric properties (Pr=14 μC/cm2, Ec=80 kV/cm) has been demonstrated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125106
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...