Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 3101-3103
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
400 keV Yb+ and 300 keV Er+ were implanted into potassium titanyl phosphate (KTiOPO4 or KTP) with doses of 3×1015 and 1×1015 ions/cm2, respectively. The samples were annealed in the temperature range 600 to 800 °C in Ar ambient. The diffusion behaviors of implanted Yb+ and Er+ in KTiOPO4 were investigated by Rutherford backscattering of 2.0 MeV He ions. The results show that no obvious diffusion of Yb+ and Er+ in KTiOPO4 is detected at 600 °C annealing, but there are three and two peaks of implanted rare-earth ion distribution after 800 °C annealing for the case of Yb+ and Er+, respectively. An explanation of these phenomena is suggested.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111360
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |