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  • 1
    Electronic Resource
    Electronic Resource
    Coulomb blockade and cotunneling in single electron circuits with on-chip resistors: Towards the implementation of the R pump (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2665-2670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate Al single electron structures equipped with miniature (8 μm long) on-chip Cr resistors of R〉Rk=h/e2(approximate)26 kΩ. From the measurement of the Coulomb blockade in single-junction structures we evaluate the self-capacitance of our resistors per unit length, c(approximate)62 aF/μm. We demonstrate that the cotunneling current in the transistor samples in the Coulomb blockade regime obeys the power law, I∝V3+2(R/Rk), predicted by Odintsov, Bubanja, and Schön for a transistor with pure ohmic-resistance leads. The concept of the three-junction single electron pump with on-chip resistors (R pump) is developed. We demonstrate that the technology available allows the R pump with a relative accuracy of the electron transfer of 10−8 to be implemented. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1286328
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Operation of a three-junction single-electron pump with on-chip resistors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 946-948 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the operation of a single-electron pump (comprising three Al/AlOx/Al tunnel junctions and two gates) connected to the bias electrodes through the compact on-chip Cr resistors, R(approximate)60 kΩ〉Rk=h/e2(approximate)26 kΩ. The function of the resistors in this so-called R pump was to suppress electron cotunneling, the process which otherwise severely deteriorates the performance of few-junction single-electron devices. When a harmonic ac drive of frequency f of several MHz was applied to the gates, the current–voltage curve of the R pump exhibited remarkably horizontal current steps at I=ef. We show that the use of the resistors is capable of substantially increasing the accuracy of the pump in comparison to operation of the pump without resistors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347017
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Storage capabilities of a four-junction single-electron trap with an on-chip resistor (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2665-2667 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the operation of a single-electron trap comprising a chain of four Al/AlOx/Al tunnel junctions attached, at one side, to a memory island and, at the other side, to a miniature on-chip Cr resistor (R(approximate)50 kΩ), which served to reduce cotunneling. At appropriate voltage bias, the bistable states of the trap, with the charges differing by the elementary charge e, were realized. At low temperature, spontaneous switching between these states was found to be very infrequent. For instance, at T=70 mK the system was capable of holding an electron for more than 2 h, this time being limited by the time of the measurement. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125112
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  • 4
    Electronic Resource
    Electronic Resource
    Instability of single-electron memory at low temperatures in Al/AlOx/Al structures (1997)
    Springer
    Journal of experimental and theoretical physics 84 (1997), S. 190-196 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A nanostructure based on a uniform one-dimensional array of ultrasmall tunnel junctions (a single-electron trap) characterized by an ability to maintain an excess charge of several electrons in an island is fabricated and investigated. Changes in the state of the trap are detected by a single-electron transistor. At the working temperature T=35 mK the storage time of a charge state is more than 8 h (which is the duration of the experiment). It is demonstrated that the possible factors limiting the lifetime of a state at temperatures below the typical temperatures for thermal activation include the influence of the random distribution and drift of the effective background charges of the metal islands, as well as the reverse influence discovered here of the transistor on the trap. As the current passing through the transistor increases, the hysteresis loop in the dependence of the charge in the trap on the control voltage narrows. It is noted that an increase in the current from 5 to 300 nA is equivalent to raising the working temperature to 250 mK.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558147
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  • 5
    Electronic Resource
    Electronic Resource
    Highly Sensitive Electrometers Based on Single Cooper Pair Tunneling (1999)
    Springer
    Journal of superconductivity 12 (1999), S. 747-755 
    Details
    ISSN: 1572-9605
    Keywords: Coulomb and Josephson effects ; thermal and quantum fluctuations ; ultrasmall tunnel junctions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A superconducting transistor structure comprising two Josephson tunnel junctions connected in series and a small island in between, which is capacitively coupled to a gate, is considered. When self-capacitances of the junctions are sufficiently small that the corresponding charging energy E c is of the order of magnitude of the Josephson coupling strength E J (and both are ≫k B T), the interplay of the charging and Josephson effects in the circuit becomes essential. This leads to a characteristic IV curve which can be effectively modulated by the gate in two limit cases of external electrodynamic impedance Z s (ω): (a) Z s = R s ≫ R Q ≈ 6.5 kΩ and (b) R s ≪ R Q . Both circuits can serve as electrometers which are competitive with traditional single-electron devices. Preliminary experimental results are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007780925567
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    Paper (German National Licenses)
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