ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A two-wavelength integrated laser diode (TWINLD) with aluminum-free active areas (AAA) has been realized by monolithically combining two different laser material structures in a single chip utilizing the metalorganic chemical vapor deposition growth and regrowth techniques. The single TWINLD chip comprises two ridge wave-guide lasers, one is an InGaP/InGaAlP material structure for a 650 nm red laser, and another is an InGaAsP/AlGaAs material structure with AAA for a 780 nm infrared laser. The chip geometry is 300 μm long and 300 μm wide with a separation of 150 μm between two laser emission spots. The ridge widths are 3.5 and 2 μm for the red and IR laser, respectively, and both lasers emit a single transverse mode with a threshold current of 12 mA for a 650 nm laser and 14 mA for a 780 nm laser under continuous wave operation condition. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1347019
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