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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature luminescence and magnetoluminescence experiments have been performed on n-type modulation-doped lattice-mismatched InAsxP1−x/InP quantum-well wires. From these experiments we can obtain information about the conduction-band subband structure, the electron effective mass, and consequently the conduction-band density of states. The doping level is high enough to populate several subbands in the conduction band which become observable in the luminescence spectra. The low-temperature luminescence spectra contain a distinct signature of the Fermi level at the high-energy slope. The zero-field wire luminescence exhibits an energy blue shift due to lateral quantum confinement within the wire and strain energy enlargement of the optical band gap. We have determined the separate energy contributions to the blue shift by high-field magnetoluminescence experiments. We have also calculated the (nonuniform) strain distribution and the strain-induced band shift within the wires. The theoretical results agree well with the experimental data. The information obtained on the subband structure and the electron effective mass can be used to estimate the length of the space-charge region in the doped area and the 1D carrier concentration in the quantum-well wires, without using any electrical contacts. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on novel results from a systematic study of excitonic transitions in high quality metalorganic vapor phase epitaxy grown InxGa1−xAs/InP quantum wells (QWs). The electronic structure of the QWs has been studied as a function of QW width as well as the built-in strain. The characterization has been performed by means of a combined Fourier transform photoluminescence (FTPL) and FTPL excitation study of the InxGa1−xAs/InP QWs. Detailed information on the energy positions for the excitons associated with various subbands (for the electrons, heavy and light holes) up to n=5 have been obtained. The experimentally determined energy positions have been compared with theoretical predictions based on an effective mass model and bulk deformation potential theory. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5256-5262 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice mismatch (strain) effects on the infrared absorption in p-type In1−xGaxAs/InP quantum wells are investigated systematically for both tensile (x(approximately-greater-than)0.47) and compressive (x〈0.47) strains. The mismatch of the valence-band parameters in the well and barrier materials is taken into account in the optical matrix element calculations. We find that normal incidence optical matrix elements substantially increase in the case of the compressive strain (the ground state is heavy hole) and decreases in the case of the tensile strain (the ground state is light hole). The peak of the normal incidence absorption in the compressively strained QW is shown to reach a considerable value of 5000–6000 cm−1 for a sheet hole concentration of 1012 cm−2. For the z-polarization of the light we found a substantial enhancement of the optical matrix elements in the case of tensile strain (i.e., for a light-hole ground state). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1706-1708 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice mismatch (strain) effects on the normal-incidence infrared absorption in In1−xGaxAs/InP quantum wells is investigated systematically, both tensile (x(approximately-greater-than)0.47) and compressive (x〈0.47) cases being considered. The difference of the valence-band parameters in the well and barrier materials is taken into account in the dipole matrix element calculations. For a constant hole sheet density, the compressive stress is found to enhance the infrared absorption substantially in the frequency range around 100 meV, corresponding to the H1–H3 type transitions, and the tensile stress is shown to decrease the normal-incidence intervalence-subband absorption.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 503-505 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reduced effective masses in InxGa1−xAs/InP quantum wells have been determined as a function of strain (x value) and well width by means of magneto-optical methods. Magnetoexcitons have been observed in photoluminescence excitation spectra in the presence of a magnetic field. At higher magnetic fields, the observed magnetoexcitons will asymptotically approach the free Landau levels. From a least square fit, the dependence of the reduced effective masses on strain and well width has been deduced. Also, the reduced effective mass including the light hole state has been determined for the tensile strained quantum well structure. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3456-3458 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report photoluminescence (PL) spectra related to a two-dimensional electron gas confined at a GaN/AlGaN heterointerface. The recombination between electrons confined in the bottom of the interface potential and photoexcited holes causes a broad PL emission about 50 meV below the GaN exciton emissions. A second emission, attributed to the recombination of electrons in the first excited level at the interface, is also observed close to the excitonic band gap in GaN. The data agree with a self-consistent calculation of the energy levels and electron concentration at the interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Bradford : Emerald
    International journal of numerical methods for heat & fluid flow 13 (2003), S. 383-394 
    ISSN: 0961-5539
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The focus is set on the development and evaluation of a numerical mgodel describing the impregnation stage of a method to manufacture fibre reinforced polymer composites, namely the vacuum infusion process. Examples of items made with this process are hulls to sailing yachts and containers for the transportation industry. The impregnation is characterised by a full 3D flow in a porous medium having an anisotropic, spatial- and time-dependent permeability. The numerical model has been implemented in a general and commercial computational fluid dynamic software through custom written subroutines that: couple the flow equations to the equations describing the stiffness of the fibre reinforcement; modify the momentum equations to account for the porous medium flow; remesh the computational domain in each time step to account for the deformation by pressure change. The verification of the code showed excellent agreement with analytical solutions and very good agreement with experiments. The numerical model can easily be extended to more complex geometry and to other constitutive equations for the permeability and the compressibility of the reinforcement.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 28 (1995), S. 534-539 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Powder X-ray diffraction patterns from independent and piled honeycomb graphitic layers with finite lateral extent containing various types of distortions have been simulated through the use of the general equation of Debye. The list of the distortions included rotation of adjacent layers around the layer normal, displacement of atoms along the layer normal, in-plane strains and bowl-like bending of layers. Such an approach allows one to estimate the impact of both regular and random deteriorations of the graphite structure on the profile shape by taking into account the diffractional contribution from each pair of atoms comprising the structural unit under consideration.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Single crystals of AlMgB 〈sub〉14〈/sub〉 and AlMgB 〈sub〉22〈/sub〉 were grown from a high-temperature aluminum metal flux in an Ar atmosphere. The optimum conditions for growing AlMgB 〈sub〉22〈/sub〉 and AlMgB 〈sub〉14〈/sub〉 were established using the starting mixtures of B/Mg=0.5-1.0 and B/Mg=2.0-6.0. The AlMgB 〈sub〉14〈/sub〉 and AlMgB 〈sub〉22〈/sub〉 crystals obtained have well-developed {001} and {100} faces, and were black with a metallic luster. The maximum dimensions of these crystals were about 5.2 mm and 4.6 mm, respectively. The values of micro-Vickers hardness of the AlMgB 〈sub〉14〈/sub〉 and AlMgB 〈sub〉22〈/sub〉 crystals are in the ranges of 23.9±0.6-27.6±0.6 GPa. The oxidation process of AlMgB 〈sub〉14〈/sub〉 and AlMgB 〈sub〉22〈/sub〉 crystals were studied up to 1473 K by TG-DTA method. The susceptibility of AlMgB14 with an increase at low temperatures does not show any particular features, being indicative of a paramagnetic contribution, which is likely due to impurities. The susceptibility of the AlMgB 〈sub〉22〈/sub〉 sample shows no apparentcontribution from impurities and also does not have any anomalous behavior
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 29 (1994), S. 2993-2997 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Grain size and lattice distortions as a function of milling time have been determined using X-ray peak broadening analysis and Brunauer-Emmett-Teller (BET) measurements. The grain size decreases from 0.22 μm in unmilled samples to 0.06 μm at 25 h milling time. Prolonged milling produced no further decrease of the grain size. The unmilled powder contained lattice distortions of 0.06%. During the first 25 h of milling only small changes of the lattice distortions occurred; longer milling times resulted in a rapid increase of the lattice distortions. At 47 h of milling, the lattice distortions had increased to about 0.11%. The results obtained by BET measurements agreed well with those obtained by X-ray analysis. No anisotropic grain size decrease was indicated during milling.
    Type of Medium: Electronic Resource
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