Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 4151-4153
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The room-temperature thermal conductivity of lateral epitaxial overgrown metalorganic chemical vapor deposition GaN films is reported to be in excess of 155 W/m K. This compares with the reported value of 130 W/m K for bulk single crystals and a similar value (135 W/m K) for a thick (∼50 μm) GaN film grown, without a nucleation layer, on sapphire by hydride vapor phase epitaxy. The measurements were made by a third-harmonic electrical measurement. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125566
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