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  • 1
    Electronic Resource
    Electronic Resource
    Electronic effects of ion mobility in semiconductors: Mixed electronic–ionic behavior and device creation in Si:Li (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2749-2762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micrometer-sized homojunction structures can be formed by applying strong electric pulses, at ambient temperatures, to Li-doped, floating zone n-Si. Two such junctions, arranged back to back, act as a transistor, as evidenced by electron-beam-induced current and current–voltage measurements. The structures are created during a time ranging from ∼100 ms to a few seconds, depending on the size of the structure. The phenomenon is similar to what was observed earlier in CuInSe2 and was explained there by thermally assisted electromigration of Cu. In the case of Si doped with Li we can use secondary-ion-mass spectrometry to detect the redistribution of Li after electric-field application. Such a redistribution is indeed found and corresponds to an n+-p-n structure with the p region extending at least ∼20 μm into the bulk of Si. Structures created in Si doped with Li in this way are stable for at least 13 months after their creation. We ascribe this to the large difference between Li diffusivity at the local temperature that is reached during structure formation (∼400 °C; 10−8 cm2/s) and at room temperature (∼10−15 cm2/s). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363132
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  • 2
    Electronic Resource
    Electronic Resource
    Self-restoration of p-n junctions in (Hg,Cd)Te (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3132-3134 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: While a p-n junction is a stable situation for electronic carriers, it represents an unstable one for the very dopants that create the junction, i.e., the junction is only kinetically stabilized against equilibration of the dopant concentrations in the chemical and electrical potential gradients in the junction region. However, when a dopant migrates with a charge opposite to the effective one that it has as a dopant, the electrical potential gradient, instead of destabilizing, can now help to stabilize the junction. Ag, which acts as an acceptor in (Hg,Cd)Te, is an example of such a dopant. We show here that in Cd-rich n-(Hg,Cd)Te, Ag creates a p-n junction that is capable of restoring itself after being smeared out by small perturbations. This behavior is inconsistent with pure kinetic stabilization of the junction and indicates that Ag dissolution in (Hg,Cd)Te strongly deviates from ideal behavior. Reasons for this nonideality are suggested. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114857
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  • 3
    Electronic Resource
    Electronic Resource
    Low temperature device creation in Si via fast Li electromigration (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 709-711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micrometer-sized homojunction structures can be formed by local application of strong electric fields (∼106 V/cm) at ambient temperatures to Si which was homogeneously doped n-type by Li. Such junctions show electroluminesence and two such junctions, arranged back to back, act as transistors, as evidenced by electron beam induced current, current-voltage and capacitance-voltage measurements. These results are explained by thermally-assisted electromigration of Li. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114107
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  • 4
    Electronic Resource
    Electronic Resource
    Fabrication of sub-μm bipolar transistor structures by scanning probe microscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1868-1870 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show how sub-μm sized transistor structures (down to 50 nm cross section) can be fabricated by thermally assisted electromigration of mobile dopants inside the semiconductor CuInSe2. Small device structures are fabricated by application of an electric field to the sample via the contact, defined by a conducting atomic force microscope tip. The structures are characterized by nm scale scanning spreading resistance and scanning capacitance measurements to reveal the inhomogeneous doping profiles created by the electric field. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122309
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