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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence characterization of InP surface reactive ion etched by a gas mixture of ethane and hydrogen (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2361-2365 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP crystals were etched by reactive ion etching (RIE) with gas mixture of ethane and hydrogen (C2H6/H2), and etching damages were characterized by photoluminescence (PL) measurements of near-edge and defect-related emissions. Near-edge PL emission intensities after RIE were equal to or larger than those before RIE, except for the samples etched for 50 min. The damage introduced by RIE was restricted to the very-near-surface region which can be removed by HF treatment. The peak energy of defect-related 1.1-eV deep emission bands shifted toward the lower-energy side for the crystals with etching damages at the surface. The peak shift is attributable to the increase of defect complexes such as P-vacancy–P-interstitial or P-vacancy–In-vacancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349436
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  • 2
    Electronic Resource
    Electronic Resource
    Metastable ferromagnetic phase formation in 35–50 at. % Mn—Ga thin films : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6683-6685 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Mn—Ga films with the composition of 35–50 at. % Mn were fabricated by means of a conventional vacuum evaporation method on glass and NaCl substrates heated at 473 K. The metastable ferromagnetic phase was formed in the samples as well as the Mn2Ga5 phases. The analysis of the x-ray and microbeam electron diffraction patterns suggested that the crystal structure of this phase was correlated with a long-range ordered structure composed of a certain number of the Mn2Ga5 cell. It was demonstrated that the presence of the metastable phase affected the magnetic properties; the metastable single-phase films had a high coercivity up to about 320 kA/m and a fairly large saturation magnetization of about 550 mT, which were comparable to those for the MnGa-σ-phase and AlMn-τ-phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352501
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetic and electric properties of Mn5Ge3/Ge nanostructured films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5372-5374 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the magnetic, electric, and structural properties of Mn5Ge3/Ge nanostructured films produced by solid-state reaction of Mn/Ge multilayered films. The films composed of strongly uniaxially oriented Mn5Ge3 and randomly oriented Ge were successfully produced. The average grain size of Mn5Ge3 considerably changed according to the discharging power (E) of the ion source: 15 nm for E=25 W and 50 nm for E=50 W. The temperature dependence of the conductivity for the E=25 sample showed semiconductor-type behavior over all the temperature region. Whereas the E=50 sample, the conduction type changed from a metallic type (low temperature) to a semiconductor type (high temperature) with the transition temperature TTR=360 K. We also observed the anomalous magnetic behavior of Mn5Ge3. We discuss these behaviors in conjunction with the microstructure of the annealed films. The possibility of the carrier–spin exchange interactions has also been studied. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369981
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  • 4
    Electronic Resource
    Electronic Resource
    Cryopreservation of Leucocytozoon caulleryi Sporozoites (1988)
    Oxford, UK : Blackwell Publishing Ltd
    The @journal of eukaryotic microbiology 35 (1988), S. 0 
    Details
    ISSN: 1550-7408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Leucocytozoon caulleryi sporozoites that had been stored at - 196° C or -80° C for 6 or 12 months in Eagle's minimum essential medium or Medium 199 supplemented with 5% glycerol and 10% chicken serum showed infectivity to chickens. Glycerol at a concentration of 10% and dimethyl sulfoxide at 10% and 5% were found to be ineffective cryoprotective agents for the low temperature preservation of sporozoites. Sporozoites isolated from the intact females of Culicoides arakawae, which had been stored at -80° C for 6 or 12 months without cryoprotective agents, retained their infectivity. No differences were observed in the prepatent period, duration of parasitemia, and presence of serum-soluble antigens between chickens infected with frozen sporozoites and those infected with fresh sporozoites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1550-7408.1988.tb04106.x
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  • 5
    Electronic Resource
    Electronic Resource
    Dielectric relaxation in amorphous thin films of SrTiO3 at elevated temperatures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1914-1919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature and frequency dispersion of dielectric permittivity was investigated on thin amorphous films of SrTiO3 prepared by a sputtering method using neutralized argon-ion beams. The amorphous SrTiO3 films deposited on glass substrates exhibited a marked dielectric relaxation at temperatures 500–800 K in a frequency range 0.1–50 kHz. This behavior was explained based on a dipolar relaxation of the Cole–Cole type with the static dielectric constant ε's(approximately-equal-to)380, the constant at high frequency ε'∞(approximately-equal-to)35, and the distribution parameter of the relaxation time β(approximately-equal-to)0.8. The analysis of the temperature dependence of relaxation time gave the activation energy for the relaxation of about 1.08 eV and the characteristic relaxation time of the order of 10−12 s. In the temperature range where strong relaxation occurred, a semiconductor-type conduction having the activation energy of about 0.84 eV became dominant. A correlation between the mechanisms of the dielectric relaxation and the thermally activated motions of ionized defects in the amorphous structure is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360228
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic and structural properties of PrCo3−xSix compounds : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7381-7383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically investigated the magnetic properties of the rare-earth compounds PrCo8Si and PrCo3−xSix, the crystal structures of which are hexagonal CeNi3-type and rhombohedral Be3Nb-type, respectively. Sharp cusps were observed in the real and imaginary parts of the ac susceptibility at temperatures between 282 (x=0.08) and 209 K (x=0.23). Also observed were bifurcations of the zero-field-cooled and field-cooled magnetization curves at the same temperatures, showing that the magnetization was irreversible below these temperatures. The effect of Si substitution for Co in this system is to decrease the average ferromagnetic exchange interaction, thus decreasing the Curie temperature, without introducing significant random magnetism effects due to exchange fluctuations or random magnetic anisotropy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367802
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  • 7
    Electronic Resource
    Electronic Resource
    Graphite thin film formation by chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 842-844 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Well-ordered graphite thin films were obtained by chemical vapor deposition of 2-methyl- 1,2'-naphthyl ketone on Ni substrates at substrate temperatures higher than 600 °C. Values of interlayer spacing calculated from x-ray diffraction data were between 3.360 and 3.350 A(ring). Raman scattering spectra of the films showed a peak centering at 1580 cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110998
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  • 8
    Electronic Resource
    Electronic Resource
    Two kinds of nitrogen atoms in nitrogen-substituted, highly crystalline graphite prepared by chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2145-2147 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen-substituted graphite thin films were prepared by chemical vapor deposition (CVD) using pyrrole as a starting material. Ni was used as the substrate material whose temperature was kept in the range 700–1000 °C. The interlayer spacing of these films, determined by x-ray diffraction, was close to that of single-crystal graphite. Two XPS peaks were observed in the N 1s spectra at around 398 and 401 eV. The former can be assigned to nitrogen atoms substituting for carbon atoms in the graphite layer and the latter to nitrogen atoms bonded to the layer edge. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112774
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  • 9
    Electronic Resource
    Electronic Resource
    Graphite thin-film formation by chemical-vapor deposition of o-methyl-diaryl ketones (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 46-48 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two kinds of o-methyl-diaryl ketones, 2,6-di(2',6'-dimethyl-1'-naphthyl)-naphthalene, (O), and 2-methyl-1,2'-naphthyl ketone, (I), were used as starting materials for chemical-vapor deposition (CVD). Raman-scattering measurements and x-ray diffraction analyses for the obtained films made it apparent that well-crystallized graphite films could be grown on Ni substrate kept above 900 and 600 °C by using the materials (O) and (I), respectively. In order to obtain the crystalline graphite by CVD, the Ni substrate was necessary and the supply rate of the starting material must be in an optimum range. When the supply rate is too large, the obtained film contained the disordered graphite structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113068
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  • 10
    Electronic Resource
    Electronic Resource
    Meyer–Neldel rule in amorphous strontium titanate thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2361-2363 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report the experimental result indicating that the electrical conductivity in thin films of amorphous strontium titanate (a-STO) is well fit to the Meyer–Neldel (MN) rule over the temperature range 300–470 K. The films were ion-beam sputtered and annealed in two different atmospheres: a vacuum and flowing oxygen. The MN plots for the films show two parallel straight lines depending on the annealing atmosphere, which give the identical MN parameters of about 35 meV with the conductivity prefactors of 9.3×10−10 and 2.3×10−14(Ω cm)−1 for the vacuum- and oxygen- annealed films, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317543
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