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  • 1
    Electronic Resource
    Electronic Resource
    Geometrical confinement of a domain wall in a nanocontact between two NiFe wires (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3468-3470 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nanocontact structure (typically 22×34 nm2) between two NiFe wires was fabricated by an electron-beam lithography and a lift-off method, and the magnetoresistance was measured. The magnetization switching process was artificially controlled by engineering the sample geometry to realize a magnetic structure with a single domain wall (DW) trapped in the nanocontact area. This domain structure was confirmed by magnetic force microscopy observations. The magnetization rotation of 180° was realized within the nanocontact area. The contribution of the DW to the resistance was negative, which can be understood on the basis of anisotropic magnetoresistance. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436552
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  • 2
    Electronic Resource
    Electronic Resource
    Development of a microwave ion source for negative oxygen ion beam production (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4911-4915 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A volume production type microwave negative ion source has been developed for negative ion beam processes such as ion implantation and ion beam deposition, etc. In order to increase efficiency of negative oxygen ion production, we employed a double plasma cell system in which two plasma cells were connected to each other. A high density primary plasma was generated in the first plasma cell with 2.45 GHz microwave power and negative ions were effectively generated in the second plasma cell. A filter magnetic field of about 0.1 T was applied on the second plasma cell to prevent diffusion of high energy electrons from the first plasma cell. Oxygen negative ion beams were generated by this method and the maximum oxygen (O−) ion current of 142 μA (current density: 325 μA/cm2) was extracted continuously from the ion source at an extraction voltage of 30 kV and a microwave power of 500 W. This value was three orders larger than that obtained by a single plasma cell system without the filter magnetic field. Molecular oxygen ions (O−2 and O−3) were also obtained at percentages of about 20% and 2% of the major O− ion intensity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146173
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  • 3
    Electronic Resource
    Electronic Resource
    Analysis of deep levels in n-type GaN by transient capacitance methods (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 304-309 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient capacitance methods were used to analyze traps occurring in unintentionally doped n-type GaN grown by hydride vapor-phase epitaxy. Studies by deep-level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy indicated the presence of three majority-carrier traps occurring at discrete energies below the conduction band with activation energies (eV) ΔE1=0.264±0.01, ΔE2=0.580±0.017, and ΔE3=0.665±0.017. The single-crystal films of GaN were grown on GaN formed by metal-organic chemical-vapor deposition and on sputter-deposited ZnO; a similar deep-level structure was found in both types of samples. Pulse-width modulation tests using DLTS to determine the capture rates of the traps showed that the capture process is nonexponential, perhaps due to the high trap concentration. The origins of the deep levels are discussed in light of secondary-ion-mass-spectroscopy analysis and group theory results in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357144
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  • 4
    Electronic Resource
    Electronic Resource
    Surface dynamics studied by perturbing the surface with the tip of a scanning tunneling microscope—Si(100) at 80 K (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 40-42 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have utilized the tip of a scanning tunneling microscope to perturb a specific local structure (the C defect) of Si(100) at 80 K, and observed the dynamical symmetric(if and only if)buckled transition of the surrounding dimers. The observed large-scale transition implies that the configuration of the dimers is determined by a detailed balance among many elastic long-range forces generated by the surrounding C defects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121716
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  • 5
    Electronic Resource
    Electronic Resource
    Preparation and properties of the dc reactively sputtered tungsten oxide films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 510-517 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preparation and properties of the dc reactively sputtered tungsten oxide films have been investigated in relation to the oxygen concentration in sputtering atmosphere. The films with 1500–20 700 A(ring) thickness were deposited on the glass substrates maintained at 200 °C by dc reactive sputtering from a metallic tungsten target under a constant operating pressure of 6.5×10−2 Torr in Ar-1%–30% O2 gas mixture. The films formed in an Ar-3%–20% O2 gas mixture are crystalline WO3, and have an electrical resistivity of 107–1011 Ω cm which is dependent on the oxygen concentration of the sputtering atmosphere. These films have a spectral transmittance above 80% in the visible and near-infrared regions, and optical band gap of the films ranges from 3.15 to 2.98 eV, depending on the oxygen concentration. Densities of the film deposited in Ar-3% O2 and in Ar-20% O2 gas mixtures are 5.85 g/cm3 and 6.65 g/cm3, respectively. Electrochemichromic properties of the transparent-crystalline WO3 films were studied using asymmetric cells, and were found to be dependent on the crystal orientation of the films. The films with the orientation of WO3 (020) and WO3 (021) formed in an Ar-3%–6% O2 gas mixture have a very good electrochromic property, and the cells composed of the crystalline WO3 films have a higher coloration rate than the cells composed of the vacuum-evaporated amorphous film. The films with the orientation of WO3 (001) and WO3 (021) formed in an Ar-8%–20% O2 gas mixture were found to have a poor electrochromic property.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340272
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  • 6
    Electronic Resource
    Electronic Resource
    Physical and electrochemichromic properties of rf sputtered tungsten oxide films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2526-2534 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physical and electrochemical coloration characteristics of tungsten oxide films rf sputtered from a compressed powder WO3 target have been investigated. Oxide films with 3600–9800 A(ring) thickness were deposited on substrates maintained at 200 °C at a total pressure of 0.5–8×10−2 Torr in Ar gas or an Ar-0.5-50% O2 gas mixture. Physical properties of the oxide films depend on the oxygen concentration and total pressure of the sputtering atmosphere. The films prepared at 4×10−2 Torr in a mixture of Ar-0.5-20% O2 gas are transparent and amorphous, and their electrical resistivity ranges from 6.5×108 to 2.4×1011 Ω cm. The films prepared at pressures between 4 and 6×10−2 Torr in an Ar-50% O2 gas mixture are transparent, and have crystallites with a composition of WO3. The films prepared at 1×10−2 Torr in a mixture of Ar-0.5 and 5.0% O2 gas are blue colored and transparent, respectively, and these films are crystallites with a composition of WO2.83. Electrochemichromic properties of the rf sputtered tungsten oxide films depend on the film structure, or on the sputtering conditions under which the films are prepared. The amorphous and crystalline WO3 films formed at a high total pressure of 3–8×10−2 Torr have good electrochemichromic properties and are colored deep blue. However, the crystalline WO2.83 films formed at a low total pressure of 0.5–1.5×10−2 Torr have poor electrochemichromic properties and are hardly colored. The amorphous oxide films with resistivity of 108–109 Ω cm and low density of ∼6.0 g/cm3, formed at a deposition rate higher than ∼100 A(ring)/min, have very good coloration characteristics. The optical properties and density of the oxide films are also described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337001
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  • 7
    Electronic Resource
    Electronic Resource
    INFLUENCE OF THE CHEMICAL STRUCTURE OF THE COMPOUNDS TO BE AMMONIFIED UPON THE RATE OF AMMONIFICATION. (1917)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 39 (1917), S. 2378-2382 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja02256a015
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  • 8
    Electronic Resource
    Electronic Resource
    Properties and Uses of Horny and Floury Endosperms of Corn (1982)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 47 (1982), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Ordinary corn kernel endosperm is composed of horny and floury portions. Corn varieties having different endosperm were investigated. Their chemical composition was almost identical, but in tissue structure the floury endosperm is soft and the horny endosperm is hard. The starch isolated from floury endosperm is easier to gelatinize, and higher in viscosity, swelling value, and α-amylase digestibility than the starch from horny endosperm. The floury endosperm is superior to the horny endosperm in such baking products as bread and cookies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1982.tb05012.x
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  • 9
    Electronic Resource
    Electronic Resource
    Organization and nucleotide sequence of the secE-nusG region of Streptomyces griseus
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Gene Structure and Expression 1217 (1994), S. 93-96 
    Details
    ISSN: 0167-4781
    Keywords: (S. coelicolor A3(2)) ; (S. griseus) ; Nucleotide sequence ; NusG ; SecE
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0167-4781(94)90130-9
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical properties and configurations of TTF and TSF salts with cis-dialkylbis(oxalato)stannate(IV) anions
    Amsterdam : Elsevier
    Inorganica Chimica Acta 105 (1985), S. 9-12 
    Details
    ISSN: 0020-1693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0020-1693(00)85239-1
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