Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1320-1322 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New experiments on short-time diffusion of gold in silicon are presented. By means of both our experiments and experiments published elsewhere, diffusion of gold in silicon is investigated in the temperature range of 900 °C to 1100 °C. A complete set of parameters is determined from these experiments using Arrhenius' law. It is found that the short-time diffusion experiments cannot be simulated without barrier energies for both the gold-point defect reactions and the Frenkel pair reaction. Their values have been determined as EAu/I=0.482 eV, EAuI/V=0.971 eV, and EI/V=0.30 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Microelectronic Engineering 21 (1993), S. 51-56 
    ISSN: 0167-9317
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Microelectronic Engineering 11 (1990), S. 161-166 
    ISSN: 0167-9317
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 70 (1976), S. 914-919 
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy Section 37 (1981), S. 449-452 
    ISSN: 0584-8539
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 49 (1989), S. 671-675 
    ISSN: 1432-0630
    Keywords: 64.75 ; 66.30J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new model for phosphorus segregation at the Si-SiO2 interface is derived and verified by experimental data. The model considers for the first time, a third phase, the interface layer itself, in addition to the Si and SiO2 phases, and the dynamics of the three-phase system is described in terms of rate equations. In particular, the phosphorus compound formation in the interface layer (phosphorus pile-up), which renders the dopant electrically inactive to a large extent, is described as a competition of the dopant in silicon and in silicon dioxide in filling and depleting a constant density of interface traps. Our model allows an unambiguous correlation of the dopant concentration on both sides of the interface with the integral dose of the interface phosphorus pile-up. Experimental data for different phosphorus concentrations, different temperatures, and different oxidation ambients, including inert anneals, are fitted by a single curve.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 485 (1982), S. 36-52 
    ISSN: 0044-2313
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Acyl and Alkylidenephosphines. XlX. Molecular and Crystal Structure of 2,4-Bis (dimethyl-amino) -1,3-diphenyl-l, 3-diphosphetane4-Methyl-1,2,6-triarsa-tricyclo[2.2.1.02.6]-heptan, CH3C(CH2As)3, (1) reacts with Ru3(CO)12 to the presumable polymeric [Ru(CO)4CH3C(CH2As)3]n (2), while no reaction takes place with Os3(CO)12·Os3(CO)11CH3CN forms with 1 at -20°C Os6(CO)21CH2As)3 (3). The reaction of 1 and Co2(CO)8 yields [Co2(CO)6CH3C(CH2As)3]n (4). 1 and Ir(CO)2(p-CH3C6H4NH2)Cl reacts in THF solution to [{Ir(CO)(THF]Cl}3{CH3C(CH2As)3}2] (5), which contains a μ3-(η2Cη1O) carbonmonoxide. Upon treatment of [(μ-Cl)Ir(C8H12)]2 with 1 [{Ir(C8H12)Cl}9{CH3C(CH2As)3}7] (6) is obtained. The reaction of 1 with Ir(CO)(PPh3)2Cl yields in THF [Ir(CO)(PPh3)(Cl)CH3C(CH2As)3]2 · THF (7a). Heating of 7a in CH2Cl2 leads to the formation of [Ir(CO)(PPh3)(Cl)CH3C(CH2As)3 · CH2Cl2]2 (7b). Pt(PPh3)3 reacts with 1 in THF to give [Pt(PPh3)CH3C(CH2As)3]2 · THF (8). The novel compounds are mostly insoluble or slightly soluble. They are characterized by elemental and thermogravimetric analysis, IR and, as far as possible, Raman and NMR Spectra. The results indicate that 1 react with the d8, d9, and d10 systems of the VIIIb metals under oxidative additions.
    Notes: Die Organoarsenkäfigverbindung 4-Methyl-1,2,6-triarsa-tricyclo[2.2.1.02.6]-heptan, CH3C(CH2As)3, (1) reagiert mit Ru3(CO)12 zu der vermutlich polymeren Verbindung [Ru(CO)4CH3C(CH2As)3]n (2), während mit Os3(CO)12 unter analogen Reaktionsbedingungen keine Reaktion beobachtet wird. Dagegen bildet Os3(CO)11CH3CN bereits bei -20°C mit 1 den Clusterkomplex Os6(CO)21CH3C(CH2As)3 (3). Mit Dicobaltoctacarbonyl reagiert 1 zu [Co2(CO)6CH3C(CH2As)3]n (4). Während 1 mit Ir(CO)2(p-CH3C6H4NH2)Cl in THF ein [{Ir(CO)(THF)Cl}3{CH3C(CH2As)3}2] (5) bildet, entsteht unter analogen Reaktionsbedingungen aus 1 und [(μ-Cl)Ir(C8H12)]2 die Verbindung [{Ir(C8H12)Cl}9{CH3C(CH2As)3}7(C8H12 = Cyclooctadien-1,5) (6). 5 enthält ein μ3-(η2Cη1O)-Kohlenmonoxid. Mit Ir(CO)(PPh3)2Cl reagiert 1 in THF zu dem vermutlich dimeren Komplex [Ir(CO)(PPh3)(Cl)CH3C(CH2As)3]2 · THF (7a), der in CH2Cl2 in den Solvat-Komplex [Ir(CO)(PPh3)(Cl)CH3C(CH2As)3 · CH2Cl2]2 (7b) übergeht. Schließlich bildet 1 mit Pt(PPh3)3 in THF das dimere [Pt(PPh3)CH3C(CH2As)3]2 · THF (8). Die neuen Komplexe sind meist unlöslich oder wenig löslich. Sie werden durch Elementaranalyse, Thermogravimetrie, IR-Spektren und soweit möglich, durch NMR-Spektren charakterisiert. Die Ergebnisse deuten darauf hin, daß 1 mit den d8-, d9- und d10-Elektronensystemen der VIIIb-Metalle allgemein oxidative Additionen eingeht.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...