Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 711-713
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Boron-doping spikes in Si have been grown by fast gas switching chemical vapor deposition at 800 or 850 °C using Si2H6 in 0.03 or 0.1 atm H2, respectively. The B2H6 doping gas was added for 2 s in two ways, viz. during growth, or as a flush while the Si2H6 was interrupted. High-resolution secondary-ion mass spectrometry (HR-SIMS) analysis has revealed the sharpest as-measured SIMS dopant profiles reported for Si grown by deposition from the gas phase. Electrical measurements show the sheet resistivity of the B spikes to be as low as 580 Ω/(D'Alembertian).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104523
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