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  • 1
    Electronic Resource
    Electronic Resource
    X-ray diffraction of nonuniform GexSi1−x/Si strained-layer superlattices (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7955-7956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GexSi1−x/Si strained-layer superlattices have been studied by means of double-crystal x-ray rocking curves. Double peaks in the same order superlattice reflections or strong oscillation fringes near the superlattice peaks were observed in the rocking curves for two different samples. Good agreement between theoretical simulations and their experimental counterparts were obtained. Our results demonstrate that these phenomena are attributed to serious local variation in layer thickness and composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353949
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray diffraction analysis of Si1−xGex/Si superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3474-3479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−xGex/Si strained-layer superlattices grown by molecular-beam epitaxy on Si substrates were investigated by x-ray double-crystal diffraction and x-ray grazing incidence diffraction. Both coherent and incoherent interfaces between the two components of the superlattices were observed. By fitting computer-simulated double-crystal x-ray-diffraction rocking curves to the experimental data, it is determined that there exist graded variations in both the component thickness ratio t1/t2 (t1 and t2 are the thickness of the Si1−xGex and the Si layers, respectively) and the fraction x in one sample. The x-ray grazing incidence diffraction experiments reveal a lattice strain relaxation of about 27% in another sample. The lattice relaxation and the influence of variations of x and t1/t2 on the rocking curves are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351423
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  • 3
    Electronic Resource
    Electronic Resource
    Electrochromic writing and erasing on tungsten oxide films in air by scanning tunneling microscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 440-443 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scanning tunneling microscope (STM) was used for both spot coloring and bleaching on α-WO3−x thin films. By wetting the STM tip with 1 M KOH solutions or de-ionized water before the tip approached, and keeping the humidity higher than 40%, the electrochemical reaction occurred at the tip–surface gap while the electrochromic reactions took place at the film surface. With a constant negative sample bias and grounded tip, a brown color circle or a light blue disk was formed on the surface with an enlarged diameter. The circle and disk formations were attributed to the production of alkali and hydrogen tungsten bronzes. By applying a positive sample bias with a grounded tip, the color of the hydrogen tungsten bronze could be bleached. The cathodic reduction of W6+ forms a color center at the W5+ site, while the anodic reaction removes an electron from the color center W5+ state. Raman spectroscopy indicated that for the colored state, the frequency for the W–O bond stretching mode increased, while for the W(Double Bond)O bonds it decreased. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1424053
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  • 4
    Electronic Resource
    Electronic Resource
    Evolution of mosaic structure in Si0.7Ge0.3 epilayers grown on Si(001) substrates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1292-1297 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report a study of mosaic structures in partially relaxed Si0.7Ge0.3 epilayers grown on Si(001) substrates by x-ray double- and triple-axis diffractometry. The samples have different layer thicknesses and hence different degrees of strain relaxation. Our results show that, at early stages of strain relaxation, the films contain mosaic regions laterally separated by perfect regions. This is because the mosaic structure caused by a misfit dislocation is effectively localized in a lateral range of the layer thickness. Therefore, far from the dislocations, the film is virtually a perfect crystal. With the increase in the degree of strain relaxation, and consequently in the dislocation density, the mosaic regions of the layer expand while the perfect regions shrink and finally vanish completely. Moreover, our results indicate that the conventional method of estimating dislocation density from the x-ray rocking curve width fails in our case. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370884
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  • 5
    Electronic Resource
    Electronic Resource
    Carbon nitride thin film synthesized on iron buffer layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7095-7098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride thin films were deposited on iron buffer layers by pulsed laser deposition assisted with ion implantation. Two types of samples (A) and (B) were prepared with and without iron layers. Several techniques were used to study the properties of the samples. Scanning tunneling microscopy (STM) was used to observe the surface structures of the samples. The difference in their surface morphologies was studied. The STM measurements also provided the relation between tunneling current and bias voltage to study the local density of states of the sample surface by calculating (dI/dV)/(I/V). Three band edges were observed from the calculated curve. Measurements by Raman and Fourier transform infrared (FTIR) spectra were carried out to study the electronic properties of the samples. The Raman spectra showed the presence of triply bonded carbon nitride bonds (C(Triple Bond)N) in sample (A), while only single bonds were observed in sample (B) by FTIR spectra. The mechanical properties were studied by nanoindentation. Both hardness and bulk modulus of the thin films were measured. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323750
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  • 6
    Electronic Resource
    Electronic Resource
    Dry laser cleaning of particles from solid substrates: Experiments and theory (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2135-2142 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experimental analysis of dry laser cleaning efficiency is done for certified spherical particle (SiO2, 5.0, 2.5, 1.0, and 0.5 μm) from different substrates (Si, Ge, and NiP). The influence of different options (laser wavelength, incident angle, substrate properties, i.e., type of material, surface roughness, etc.) on the cleaning efficiency is presented in addition to commonly analyzed options (cleaning efficiency versus laser fluence and particle size). Found laser cleaning efficiency demonstrates a great sensitivity to some of these options (e.g., laser wavelength, angle of incidence, etc.). Partially these effects can be explained within the frame of the microelectronics engineering (MIE) theory of scattering. Other effects (e.g., influence of roughness) can be explained along the more complex line, related to examination of the problem "particle on the surface" beyond the MIE theory. The theory of dry laser cleaning, based on one-dimensional thermal expansion of the substrate, demonstrates a great sensitivity of the cleaning efficiency on laser pulse shape. For the reasonable pulse shape this theory yields the threshold fluence by the order of magnitude larger than the experimental one. At the same time the theory, which takes into account the near-field optical enhancement and three-dimensional thermal expansion effects, yields the correct values for threshold. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389477
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  • 7
    Electronic Resource
    Electronic Resource
    X-ray analysis of ZnSe/ZnSTe quantum structure (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2518-2520 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel microstructure of an A1BA2-type ZnSTe/ZnSe quantum structure has been investigated by high-resolution x-ray two-axis diffraction, reflectivity, and x-ray topography which offer a nondestructive, high-strain-sensitive method for analyzing low-dimensional structures. The results show that the molecular-beam-epitaxy growth condition was well controlled to suppress dislocations extending from the substrate and the epitaxial layers have high crystalline quality. The ZnS0.665Te0.335 epilayer undergoes a tensile strain with εT(parallel)=2.5633×10−2 and εT⊥=8.8254×10−2 while a compressed strain with εB(parallel)=2.7864×10−3 and εB⊥=9.5061×10−3 exists in the first layer of ZnSe. The interfacial roughness is about 5 A(ring) and the lateral correlation length ≥2000 A(ring). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363035
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  • 8
    Electronic Resource
    Electronic Resource
    Determination of surface roughness of InP (001) wafers by x-ray scattering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4154-4158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface roughness of polished InP (001) wafers were examined by x-ray reflectivity and crystal truncation rod (CTR) measurements. The root-mean-square roughness and the lateral correlation scale were obtained by both methods. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model of surface faceting is proposed to explain the experimental data. The sensitivities of the two methods to the surface structure and the role of the resolution functions in the CTR measurements are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357366
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  • 9
    Electronic Resource
    Electronic Resource
    Interference effects in x-ray double-crystal rocking curves of GexSi1−x/Si superlattices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1320-1322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interference effects in the x-ray double-crystal rocking curves of GexSi1−x/Si strained-layer superlattices have been simulated based on the x-ray dynamical scattering theory. We found that the A1BA2 type of structure due to unstable growth conditions causes a series of strong oscillation fringes beside the superlattice reflection satellite peaks. The positions and intensities of these oscillation fringes with respect to the superlattice satellite peaks are strongly correlated to the number of periods in the subsuperlattice layer B and the relative mean lattice mismatch between A and B with respect to the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357794
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  • 10
    Electronic Resource
    Electronic Resource
    X-ray analysis of strain relaxation in strained-layer superlattices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 810-814 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical simulations of x-ray double-crystal-diffraction rocking curves for strain-relaxed superlattices have been successfully carried out based on x-ray dynamical diffraction theory. The strain relaxation, the misorientation between the superlattice layers and the substrate, and the effect of peak broadening due to the formation of misfit dislocations have been taken into account. The influence of possible strain relaxation mechanisms and relaxation ratios on the rocking curves have been investigated. It was found that both the mechanism and degree of the strain relaxation of the superlattice can be determined by fitting the angular positions and the relative intensities of the experimental superlattice satellites. By using this method, an InxGa1−xAs/GaAs superlattice sample and a GexSi1−x/Si superlattice sample were analyzed. The different strain-relaxation mechanisms were found in these two samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357754
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