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  • 1
    Electronic Resource
    Electronic Resource
    Optical properties of reduced lithium niobate single crystals (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5804-5809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical transmission of LiNbO3 single crystals has been measured in the wavelength range 200–900 nm, for different degrees of reduction, to study the effect of reduction on the optical characteristics of LiNbO3 near the fundamental absorption edge. The optical transitions in LiNbO3 were found to be indirect and the band gap decreased with increasing degree of reduction. The band observed at 2.48 eV in the absorption spectrum in heavily reduced samples has been attributed to the formation of polarons, and the theoretical model of Reik and Heese [J. Chem. Solids 28, 581 (1967)] for small polarons is used to correlate the optical and electrical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346951
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  • 2
    Electronic Resource
    Electronic Resource
    Rapid thermally processed ferroelectric Bi4Ti3O12 thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5517-5519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Bi4Ti3O12 thin films having perovskite structure were successfully produced on platinum coated silicon substrates by the sol-gel technique. Crack-free and crystalline films of 5000 A(ring) thickness were fabricated by spinning and post-deposition rapid thermal annealing treatment at 500 °C for 20 s. The films exhibited good structural, dielectric, and ferroelectric properties. The measured dielectric constant and loss factor at a frequency of 100 kHz were 180 and 0.014 and remanent polarization and coercive field were 5.4 μC/cm2 and 135 kV/cm, respectively. The films showed good switching endurance under bipolar stressing at least up to 1010 cycles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351949
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  • 3
    Electronic Resource
    Electronic Resource
    Preparation and characterization of rf sputtered indium tin oxide films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 384-392 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium tin oxide films have been grown by rf sputtering at various Ar-O2 mixtures, at low substrate temperatures (200 °C), and deposition rates (25 A(ring)/min), followed by post deposition annealing (at 350 °C) in different ambients (O2, N2, and cracked ammonia). Influence of a reactive gas (oxygen) on the sputtering rate of a metallic (indium/tin) alloy target has been investigated. Growth parameters and annealing conditions have been optimized. The films were characterized by electron and x-ray diffraction, scanning electron microscopy, and transmittance as a function of wavelength. The effect of heat treatment in various environments on the structural, electrical, and optical properties has been investigated. Effect of a new annealing ambient, cracked ammonia (reducing atmosphere), on the reactively sputtered oxide films is being reported for the first time. Cracked ammonia was found to be very effective and cheap and resulted in films of high quality (electrical and optical) with good structural properties. Films with low sheet resistances (Rs=30 Ω/(D'Alembertian) at film thicknesses of 800 A(ring) and Rs=8.5 Ω/(D'Alembertian) at film thicknesses of 5000 A(ring)) with high visible transmission (∼95%) have been achieved by annealing in cracked ammonia.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335481
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of postdeposition annealing on the structural and optical properties of sputtered zinc oxide film (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1063-1073 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of postdeposition annealing on the structural and optical properties of rf sputtered insulating zinc oxide films has been investigated. The as-grown films deposited on quartz substrates were highly c-axis oriented and in a state of stress. These films become almost stress free after a postdeposition annealing treatment at 673 K for 1 h in air. Above 673 K, a process of coalescence was observed which causes major grain growth resulting in microcrack formation and surface roughness. The refractive index shows a strong frequency dispersion below the interband absorption edge. The optical dispersion data have been fitted to (1) a single oscillator model and (2) the Pikhtin–Yas'kov model. The origin of optical dispersion at different annealing temperatures has been discussed in the light of these models. A packing density of more than 99% is estimated in the film annealed at 673 K, indicating that these films are almost void free. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362842
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of target-substrate distance on the growth and properties of rf-sputtered indium tin oxide films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1270-1280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium tin oxide films have been deposited by rf sputtering an oxide target (90% In2O3+10% SnO2). Transparent conducting films have been obtained on room-temperature substrates without any post-deposition annealing. The effects of target-substrate separation on the growth characteristics and film properties have been studied. The virtual-source formation of the sputtered neutrals in the gap between the target and substrate has been observed. The effect of sputtering parameters on the position of the virtual source has been studied. It has been observed that the films deposited onto substrates kept below and above the virtual source have different properties. The films on substrates kept above the virtual source have (222) preferred orientations, with a direct optical band gap of 3.7 eV, an electron effective mass of 0.51 m, and a figure of merit ∼14×10−3 Ω−1. The films on substrates below the virtual source have preferred orientations along (440) and (400), with a band gap of 3.5 eV, an effective mass of 0.2 m, and a higher figure of merit ∼40×10−3 Ω−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343022
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  • 6
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of rf-sputtered amorphous barium titanate thin films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4475-4481 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and electrical properties of rf-sputtered amorphous BaTiO3 thin films grown on water-cooled substrates have been investigated. The dielectric and electrical properties have been studied for films grown under varying sputtering gas composition (Ar+O2 gas mixtures) as a function of film thickness, frequency, and temperature. As-grown films were amorphous in nature and highly transparent. Post-deposition annealing had no discernible effect either on film structure or dielectric properties, and there was no evidence of ferroelectricity. Films sputtered in pure argon showed a dielectric constant ε'∼12 with little dependence on frequency (0.1–100 kHz) over the temperature range 0–75 °C. The dielectric properties were a function of film thickness and the percentage of oxygen in the sputtering gas during growth. The thickness-dependent dielectric properties of amorphous BaTiO3 thin films on conducting glass substrates could be satisfactorily explained by a model based on the existence of electrode barriers. The high breakdown voltage (106 V/cm), charge storage capacity (3.1 μC/cm2), and frequency- and temperature-dependent dielectric properties of a-BaTiO3 films sputtered in pure argon show promise for application as insulating layers in thin-film electroluminescent display devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339037
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  • 7
    Electronic Resource
    Electronic Resource
    Fatigue in sol-gel derived barium titanate films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 341-346 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of fatigue on the electrical properties of sol-gel derived ferroelectric barium titanate (BaTiO3) thin films have been investigated. At room temperature, the resistivity, breakdown field, dielectric constant (ε), and loss tangent (tan δ) decreases after fatigue while the coercive field increases. Fatigue also influences the dielectric properties of the film at high temperatures. The sharpness and magnitude of the peak in the dielectric constant at the transition temperature decreases after fatigue. The loss tangent of the virgin film showed a peak at the transition temperature while it is absent in the case of the fatigue film. The phenomena are explained in terms of (i) the accumulation of point charge defect, (ii) the pinning of domain wall mobility, and (iii) the space charge layer models of fatigue. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369453
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  • 8
    Electronic Resource
    Electronic Resource
    Structural and optical properties of sol-gel-processed BaTiO3 ferroelectric thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3547-3549 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: BaTiO3 thin films having a perovskite structure were deposited onto stainless steel and fused quartz substrates by sol-gel processing. Crystalline, transparent, and crack-free films of 5000 A(ring) thickness were fabricated by spinning and post-deposition annealing at a temperature of 600 °C. Ferroelectric properties were confirmed by P-E hysteresis loops. The dielectric constant and optical transmission were also measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105653
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  • 9
    Electronic Resource
    Electronic Resource
    Hexagonal barium titanate films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 947-949 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication of hexagonal barium titanate films by sputtering technique is reported. Compressed powders of hexagonal barium titanate were sputtered in argon/oxygen gas mixtures. The as-grown films were amorphous and a post-deposition annealing above 700 °C resulted in the crystallization of the films with hexagonal crystal structure. Transmission electron microscopy was used to study the crystallization of the amorphous films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106470
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  • 10
    Electronic Resource
    Electronic Resource
    Structural and optical properties of ferroelectric Bi4Ti3O12 thin films by sol-gel technique (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2389-2390 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric thin films of Bi4Ti3O12 were fabricated on several types of substrates, including quartz, steel plates, and indium-tin-oxide coated glass slides, by sol-gel technique. Crystalline, transparent, and crack-free films of 5000 A(ring) thickness were fabricated by spinning and post-deposition annealing at a temperature of 550 °C. Ferroelectric properties were confirmed by P-E hysteresis loops. The dielectric constant and optical transmission were also measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106025
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