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  • 1
    Electronic Resource
    Electronic Resource
    Study of carrier transport in metal/porous silicon/Si structures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6911-6914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical contacts to porous silicon were formed by depositing various metals such as aluminum, gold, and titanium onto its surface. Low temperature current–voltage measurements were performed, which allowed us to identify the contact as a metal–insulator–semiconductor (MIS) structure. The parameters which characterize the MIS structure: the mean barrier height presented by the insulating film (χ), the barrier height presented to the electrons in the metal by the semiconductor itself (VB0), the ideality coefficient (n) and the series resistance (Rs), were determined for each type of contact studied. All of these contacts show fairly high values of the ideality coefficient, which are explained by the presence of a large concentration of interface states. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371772
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  • 2
    Electronic Resource
    Electronic Resource
    Ageing of aluminum electrical contacts to porous silicon (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 583-586 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical contacts to porous silicon (PS) were formed by depositing aluminum onto its surface. The corresponding Al/PS/Si structures show a rectifying behavior, even after prolonged times in contact to the atmosphere. The series resistance and the ideality factor as a function of time of storage in ambient air have been determined by employing a variation of the Norde method. We have also studied the influence of the electrolytic formation parameters in the process of aging of the Al/PS/Si structures. The results show that longer anodization times and higher formation current densities of the PS layer lead to a faster diminution of the current flowing through the Al/PS/Si structure as a result of its exposition to the atmosphere. However, when the surface of the PS layer is chemically etched, the diminution of the current is significantly slower than in the case of untreated samples. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369394
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  • 3
    Electronic Resource
    Electronic Resource
    Direct determination of grain sizes, lattice parameters, and mismatch of porous silicon (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 25-27 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution transmission electron microscopy and digital image processing were used to investigate in detail the structure of porous silicon (PS). It was found that PS is composed of rounded Si nanocrystals with characteristic sizes between 21 and 80 Å, embedded into an amorphous matrix and with no preferential orientation. We have determined that the size distribution of the nanocrystals can be fitted to a Gaussian distribution centered at 45.89 Å. Furthermore, the structure of the individual Si grains was studied, which allowed us to determine that the interplanar distance varies from 3.17 to 3.41 Å, with Gaussian distribution centered at 3.24 Å. Finally, the lattice parameter of the individual Si grains that compose PS was also measured, showing a Gaussian distribution centered at 5.61 Å. The origin of the structure of PS is also discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491007
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  • 4
    Electronic Resource
    Electronic Resource
    FTIRS study of porous silicon at different oxidation stages (1999)
    Springer
    Journal of materials science 34 (1999), S. 3067-3069 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electroluminiscence (EL) in liquid of porous silicon (PS) has been attributed to radiative recombination of electrochemically generated holes from the bulk of the semiconductor and electrons injected into the conduction band of PS by species adsorbed on the surface. An examination of the surface of PS submitted to oxidation by means of Fourier Transform Infrared Spectroscopy indicates that the concentration of Si-Hx bonds does not significantly vary during the time interval in which EL is recorded, and therefore that the electrons belonging to the Si-H bonds do not intervene in the generation of EL.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004688613686
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  • 5
    Electronic Resource
    Electronic Resource
    Cross-section TEM and Optical Characterization of Porous Silicon Multilayer Stacks (1998)
    Springer
    Journal of materials science 17 (1998), S. 845-847 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006654926348
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of Photoetching on Porous Silicon Morphology (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 677-682 
    Details
    ISSN: 0142-2421
    Keywords: silicon ; light irradiation ; surface tension ; transmission electron microscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The morphological differences between porous silicon formed in the dark or under illumination have been studied by means of gravimetric measurements, transmission electron microscopy, infrared spectroscopy and cyclic voltammetry. Photoetching has been found to give rise to a complex surface structure, due to the presence of narrower outer silicon fibres, which suffer a more severe cracking process upon drying. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
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