Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 1231-1233
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have fabricated Ge/Si heterojunction photodetectors with high responsivities of 550 mA/W at 1.32 μm and 250 mA/W at 1.55 μm and time responses shorter than 850 ps. High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition followed by cyclic thermal annealing. The beneficial effect of the post-growth thermal annealing on the electrical properties of Ge epilayers, due to the reduction of threading-dislocation densities, is confirmed by the dramatic enhancement of the performance of the photodetectors. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125993
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