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  • 1
    Electronic Resource
    Electronic Resource
    Low voltage stress induced leakage currents and surface states in ultrathin (1.2–2.5 nm) oxides (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2123-2132 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been shown recently that the low voltage gate current in ultrathin oxide metal–oxide–semiconductor devices is very sensitive to electrical stresses. Therefore it can be used as a reliability monitor when the oxide thickness becomes too small for traditional electrical measurements to be used. This paper presents a thorough study of the low voltage gate current variation for different uniformed or localized electrical stress conditions at or above room temperature, and for various oxide thicknesses ranging from 1.2 to 2.5 nm. As it has been proposed recently that this current could be due to electron tunneling through Si/SiO2 interface states, the results obtained in the thicker oxides for the gate current have been compared with the corresponding surface state density variations measured by charge pumping. It is shown that there is no clear relation between low voltage gate current increase after stress and that of surface state density, and that soft or hard oxide breakdown happens when the low voltage current reaches a critical value independently of the stress created interface state density. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430536
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  • 2
    Electronic Resource
    Electronic Resource
    Si–SiO2 barrier height and its temperature dependence in metal-oxide-semiconductor structures with ultrathin gate oxide (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3334-3336 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The potential distribution across n+ polycristalline silicon (poly-Si)/SiO2/Si(p) structures, with an oxide layer thinner than 4 nm, was determined using a full quantum self-consistent model. When applied to capacitance–voltage measurements, it allows an accurate determination of the oxide thickness tox to be made. When applied to current–voltage measurements, in the Fowler–Nordheim regime, it leads to an accurate determination of the barrier height Φ at the interface between the emitting poly-Si gate electrode and the oxide, over a temperature range 20–250 °C. The results show a constant Φ(0 K) for 3 nm〈tox≤9 nm. However, the temperature sensitivity |dΦ/dT| increases from 0.35 to 0.7 meV/K with tox reduction. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1476709
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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