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  • 1
    Electronic Resource
    Electronic Resource
    Raman study of cw laser-induced crystallization of a-Si:H films on quartz and sapphire substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3696-3701 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Raman-scattering study of amorphous-to-crystalline transition in a-Si:H films on quartz and sapphire substrates induced by cw laser annealing is reported. The threshold power density for crystallization is much greater for a-Si:H films on sapphire than on quartz substrates. It is determined that crystallization occurs in a-Si:H films on quartz substrates due to a bulk-induced solid phase process. Crystallization in a-Si:H films on sapphire substrates is due to liquid phase epitaxy. It was found that annealing with laser powers significantly greater than the threshold powers causes substantial stresses at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348462
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Raman study of stress-relieved silicon-on-sapphire films prepared by cw-laser annealing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7815-7819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous-wave laser annealing experiments for producing stress-relieved crystalline silicon-on-sapphire (c-SOS) films are reported. A comparative study of laser annealing has been made on c-SOS and phosphorous-implanted c-SOS films. Raman scattering was used to monitor stresses during the laser annealing process and for characterizing the processed films. The best stress-relieved c-SOS films were obtained by laser annealing the phosphorous-implanted chemical-vapor-deposition-grown SOS films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347511
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Raman study of phosphorous-implanted and pulsed laser-annealed GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1985-1993 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy has been used to study structural disorder in phosphorous ion-implanted GaAs. Line-shape asymmetry of the one-phonon mode and the oscillator strength of the two-phonon combination spectra are used to characterize the disorder. This analysis permits a rough identification of the threshold for amorphization. Localized vibrational mode of phosphorous impurities in ion-implanted and pulsed laser-annealed (PLA) GaAs is reported and its intensity variation with fluence of the implant is studied. The softening of the LO-phonon mode in ion-implanted, PLA GaAs is explained as an inherent impurity effect. The presence of a partially annealed deep layer is investigated by observing a disorder activated mode in the Raman spectrum and by an enhancement in the intensity of the forbidden TO phonon. The occurrence of defects on the surface after PLA is investigated by the wavelength dependence of the LO-phonon softening.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337200
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Raman study of amorphous to microcrystalline phase transition in cw laser annealed a-Si:H films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5322-5326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic behavior of continuous wave (cw) laser-induced crystallization in the a-Si:H film on a quartz substrate is studied by light scattering. Microcrystals of dimensions less than 30 A(ring) could be grown in a stable state and it is demonstrated that the surface-to-volume correction is essential for estimating the frequency of the crystallinelike mode. It is suggested that bulk-induced crystallization may be responsible for the formation of very small crystallites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343723
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    Paper (German National Licenses)
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