ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Experimental results are presented for SiC epitaxial layer growth employing a large-area,up to 8x100-mm, warm-wall planetary SiC-VPE reactor. This high-throughput reactor has beenoptimized for the growth of uniform 0.01 to 80-micron thick, specular, device-quality SiC epitaxiallayers with low background doping concentrations of 〈1x1014 cm-3 and intentional p- and n-typedoping from ~1x1015 cm-3 to 〉1x1019 cm-3. Intrawafer layer thickness and n-type doping uniformity(σ/mean) of ~2% and ~8% have been achieved to date in the 8x100-mm configuration. The totalrange of the average intrawafer thickness and doping within a run are approximately ±1% and ±6%respectively
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.159.pdf
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