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  • 1
    Electronic Resource
    Electronic Resource
    Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1848-1850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si/Si0.64Ge0.36/Si heterostructures have been grown at low temperature (450 °C) to avoid the strain-induced roughening observed for growth temperatures of 550 °C and above. The electrical properties of these structures are poor, and thought to be associated with grown-in point defects as indicated in positron annihilation spectroscopy. However, after an in situ annealing procedure (800 °C for 30 min) the electrical properties dramatically improve, giving an optimum 4 K mobility of 2500 cm2 V−1 s−1 for a sheet density of 6.2×1011 cm−2. The low temperature growth yields highly planar interfaces, which are maintained after anneal as evidenced from transmission electron microscopy. This and secondary ion mass spectroscopy measurements demonstrate that the metastably strained alloy layer can endure the in situ anneal procedure necessary for enhanced electrical properties. Further studies have shown that the layers can also withstand a 120 min thermal oxidation at 800 °C, commensurate with metal–oxide–semiconductor device fabrication. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123689
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1245-1247 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall-and-Strip measurements on modulation-doped SiGe heterostructures and combined Hall and capacitance–voltage measurements on metal-oxide-semiconductor (MOS)-gated enhancement mode structures have been used to deduce Hall scattering factors, rH, in the Si1−xGex two-dimensional hole gas. At 300 K, rH was found to be equal to 0.4 for x=0.2 and x=0.3. Knowing rH, it is possible to calculate the 300 K drift mobilities in the modulation-doped structures which are found to be 400 cm2 V−1 s−1 at a carrier density of 3.3×1011 cm−2 for x=0.2 and 300 cm2 V−1 s−1 at 6.3×1011 cm−2 for x=0.3, factors of between 1.5 and 2.0 greater than a Si pMOS control. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123513
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of the ohmic conductivity and activation energy of Pb1+y(Zr0.3Ti0.7)O3 thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 518-520 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ohmic conductivity of the sol–gel derived Pb1+y(Zr0.3Ti0.7)O3 thin films (with the excess lead y=0.0 to 0.4) are investigated using low frequency small signal ac and dc methods. Its temperature dependence shows two activation energies of 0.26 and 0.12 eV depending on temperature range and excess Pb levels. The former is associated with Pb3+ acceptor centers, while the latter could be due to a different defect level yet to be identified. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1387264
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  • 4
    Electronic Resource
    Electronic Resource
    Study of Hall and effective mobilities in pseudomorphic Si1−xGex p-channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5210-5216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of several Si0.8Ge0.2 p-channel heterostructures with self-aligned poly-Si metal–oxide–semiconductor gates were carried out. A novel fabrication process was developed which is compatible with the strained Si/SiGe system, and it has allowed Hall and resistivity measurements to be performed at room temperature and at 4.2 K. The structures were numerically modelled to calculate the charge distribution with temperature and with gate voltage and the results have shown good agreement with experiment. Hall measurements at 4.2 K have shown consistent SiGe channel Hall mobility enhancements of ×3 over the SiO2/Si channels in the same devices. Room temperature effective mobilities were measured for a buried Si0.8Ge0.2 p-channel metal–oxide–semiconductor field-effect transistor heterostructure using capacitance–voltage measurements to calculate the carrier density. Mobilities are consistently over 300 cm2/V s and the low temperature studies, together with measurements of comparable modulation doped heterostructures, and secondary-ion-mass spectroscopy depth profiles suggest that this mobility is at present limited by the quality and proximity of the SiO2/Si interface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366385
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