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  • 1
    Electronic Resource
    Electronic Resource
    Tunneling and the temperature dependence of hydrogen transfer reactions (1983)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 87 (1983), S. 1283-1285 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100231a002
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  • 2
    Electronic Resource
    Electronic Resource
    Two-dimensional modulated ferrimagnetic systems (abstract) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4903-4903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi2Sr2MnOy, isomorphic to the high-Tc compound containing Cu, exhibits a displacement modulation driven by the bending of Bi double layers, thus creating a modulated environment for the magnetic MnO2 layers which are 12 A(ring) apart. Neutron scattering results will be presented, showing antiferromagnetic order in zero field and a field-induced transition to weak ferromagnetism. This behavior is a direct consequence of the structural modulation which breaks the symmetry of two otherwise equivalent ordering directions of (010) and (100)−the latter being associated with weak ferromagnetism. Magnetic scattering has been observed at superlattice positions, suggesting that the displacement modulation affects the valence of the magnetic ions. Subtle differences in magnetic behavior are observed in similar compounds where Pb is substituted for Bi and Ca for Sr. These results will be discussed in terms of a modulated magnetic model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348950
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  • 3
    Electronic Resource
    Electronic Resource
    Hysteresis in the switching of hot electrons in InP/InGaAs double-heterojunction bipolar transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2559-2561 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The switching behavior of a composite-collector InP/InGaAs heterojunction bipolar transistor is found to be hysteretic at temperatures below 200 K. This arises from the underlying S-shaped negative differential conductivity associated with the hot-electron transport of electrons across the heterojunction barrier in the collector structure of such transistors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358456
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  • 4
    Electronic Resource
    Electronic Resource
    Bias voltage propagation in a semi-insulator: Effect on the impulse response of an InGaAs:Fe planar photodetector (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1578-1582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A semiconductor with a high resistivity due to a deep trap is called a semi-insulator. A semi-insulator does not always behave like a normal insulator because of so-called bias voltage propagation, which arises from space charge in the deep trap. This effect is a factor in the operation of various devices based on semi-insulators. We investigate by numerical simulation its role in the transient photoresponse of a planar metal–semiconductor–metal photodetector. We simulate a realistic case where the active layer is InGaAs made semi-insulating by addition of Fe. The simulation uses a two-dimensional, drift/diffusion calculation with realistic conditions where the semi-insulating material is represented by a two-level compensation model with Fe as a deep acceptor that compensates shallow n-type impurities. The results give a microscopic picture on a picosecond time scale of factors that affect the transient response: trapping, space charge, propagation of the bias field, and the spatial distribution of the carriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361001
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  • 5
    Electronic Resource
    Electronic Resource
    Two-dimensional numerical simulation of the pulse response of a semi-insulating InGaAs:Fe photodetector (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5756-5764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A calculation is described of the transient pulse response of a planar metal-semiconductor-metal photodetector consisting of Schottky contacts made to an active layer of semi-insulating InGaAs:Fe that is supported on an InP:Fe substrate. The simulation uses a two-dimensional, drift/diffusion calculation and includes external circuit elements. Realistic conditions are considered where the semi-insulating material is represented by a two-level compensation model with Fe as a deep acceptor and hole trap that compensates shallow n-type impurities. The calculated results are compared directly with experimental ones for micron-scale devices described in the literature. The calculation gives a microscopic picture of how trapping controls particularly the falling side of the transient response, and it also shows how the measured performance of the device can reflect the influence of typical external circuit elements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359638
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  • 6
    Electronic Resource
    Electronic Resource
    Modeling the effect of a buried layer in GaAs metal-semiconductor-metal photodetectors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4077-4087 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When an undoped heterostructure layer is buried in a conventional GaAs metal-semiconductor-metal photodetector, it is intended to improve the transient response to a pulse of light by preventing carriers that are photogenerated deep in the device from reaching the electrodes. The physics behind this strategy are investigated by means of a two-dimensional, finite-difference simulation of a practical structure. It is argued that previous experimental tests are equivocal because they do not investigate fully all the circumstances that determine the benefit of a buried layer over simpler structures. The simulation suggests that, judged from the fall time of the transient response, there are additional factors to be considered. These include the nature of the active layer and whether the illumination has a dc component. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359491
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  • 7
    Electronic Resource
    Electronic Resource
    One-flux analysis of current blocking in double-heterostructure bipolar transistors with composite collectors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2762-2770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The flux method of McKelvey, Longini, and Brody [Phys. Rev. 123, 51 (1961)] is used to analyze current blocking in double-heterostructure bipolar transistors with composite collectors (CC). The effects of electron accumulation in the spacer layer are included; these are shown to impose an intrinsic limit on the simplest CC design. The analysis is extended to include compositional or band-gap grading, which can substantially reduce the current blocking at high currents, though it has less effect at lower currents. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361107
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  • 8
    Electronic Resource
    Electronic Resource
    Current blocking in InP/InGaAs double heterostructure bipolar transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2771-2778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The one-flux analysis of double-heterostructure bipolar transistors with composite collectors in the preceding article W. R. McKinnon, J. Appl. Phys. 79, 2762 (1996) is compared to drift-diffusion calculations and to measurements on InP/InGaAs/InP/composite collectors-double heterostructure bipolar transistors. For quantitative agreement we include the effects of ionized impurities in the space-charge regions, and an approximate treatment of Fermi–Dirac statistics. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361108
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  • 9
    Electronic Resource
    Electronic Resource
    Modeling a backgated GaAs metal–semiconductor–metal photodetector (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5449-5453 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use a two-dimensional, drift-diffusion calculation to illustrate the physics behind the recently described GaAs metal–semiconductor–metal photodetector with an ohmic backgate provided by a p-doped layer. We calculate the transient response of this structure to a pulse of illumination. According to these simulations, the speed of the falling side of the response is improved by the backgate, which removes photogenerated holes from the active layer, but the degree of improvement depends on the chosen contact. The fastest fall time is found in the current at the cathode when both the cathode and backgate are grounded. We show why this is faster than the response of the current at either the anode or the backgate, and why this advantage is practically lost when the backgate is biased.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362733
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  • 10
    Electronic Resource
    Electronic Resource
    Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5231-5234 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we show the effect on the dc and rf transport characteristics of dipole doping at the collector heterojunction in an InP/InGaAs double heterojunction bipolar transistor. We show how the switching characteristics of devices with abrupt undoped InGaAs/InP collector heterojunctions can almost be eliminated by using the dipole doping at that interface and how the high-frequency performance is also improved. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366388
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