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  • 1
    Electronic Resource
    Electronic Resource
    Fatigue and switching in ferroelectric memories: Theory and experiment (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5783-5791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model of fatigue in ferroelectric thin-film memories based upon impact ionization (e.g., Ti+4 to Ti+3 conversion in PbZr1−xTixO3), resulting in dendritic growth of oxygen-deficient filaments, is presented. The predictions of spontaneous polarization versus switching cycles Ps(N) are compared with both Monte Carlo simulations for a two-dimensional Ising model and with experimental data on small-grain (40 nm) sol-gel PZT films. Excellent agreement between theory and experiment is obtained. In addition to modeling the Ps(N) curves, the theory developed explains the observed linear proportionality between switching time ts(N) and polarization Ps(N) during fatigue; other models of aging do not account for this. Earlier theories of switching are also extended to include finite grain sizes, surface nucleation, triangular drive pulses, and dipolar forces. Good agreement with sol-gel PZT switching data is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346948
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Quantitative measurement of space-charge effects in lead zirconate-titanate memories (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 382-388 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By combining Auger data on the width of an oxygen depletion layer near the Pt electrodes with a modified Langmuir–Child law for the leakage current: I(V) = aV + bV2, we deduce parameters related to the space-charge density and field in 210-nm-thick PbZr1−xTixO3 memories. The results are compared with the space charge fields inferred by Okazaki (∼10 kV/cm for PZT), which involve measuring the switching speeds ts(E) for positive and negative voltages. Differences in the voltage dependencies of the leakage current are found after fatigue and are related to specific electrochemical processes involving oxygen deposition on electrode surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350286
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Radiation effects on ferroelectric thin-film memories: Retention failure mechanisms (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1444-1453 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric thin-film (200–350 nm) memories were fabricated and tested. Two materials were used as memory cells: potassium nitrate (KNO3) and lead zirconate titanate (PbZr0.54Ti0.46O3, usually abbreviated as PZT). These devices were tested as arrays deposited either by thermal evaporation (in the case of KNO3) or sputtered films (PZT). Fully packaged devices were tested to determine switching speed and polarization (switched charge) as functions of temperature and applied voltage. Radiation hardness was also tested for both dose rate and total dose. The switching kinetics were investigated in considerable detail and found to confirm the theory of Ishibashi. The dimensionality of domain growth for the switching process in KNO3 lowers from 2.3 before irradiation to 1.6 after 0.5 Mrad. For PZT rad hardness exceeds 5 Mrad total dose and 2×1011 rad/s. A surprising result was that the hysteresis curves for all of the PZT samples became more symmetric after 5 Mrad irradiation; this is interpreted as a destruction of internal biasing fields. All PZT memories continued to function after 5 Mrad, but 2 out of 8 of those stored under short-circuited conditions failed to retain information. An explanation of the retention failure of the short-circuited cells is given in terms of space-charge and well-known electret effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344419
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Fatigue-free ferroelectric capacitors with platinum electrodes (1995)
    [s.l.] : Nature Publishing Group
    Nature 374 (1995), S. 627-629 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Ferroelectrics subjected to repetitive polarization switching exhibit 'fatigue', a decrease in the amount of charge switched each time. For ferroelectric oxides, such as the commonly used perovskite titanates, configured with metal electrodes (usually platinum), fatigue is thought to arise ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/374627a0
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  • 5
    Electronic Resource
    Electronic Resource
    Process Integration of Embedded FeRAMs (1999)
    Springer
    Journal of electroceramics 3 (1999), S. 135-142 
    Details
    ISSN: 1573-8663
    Keywords: ferroelectric memories ; integrated ferroelectrics ; embedded microcontrollers ; ferroelectric material and integration
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract This paper describes the general aspects of embedding Ferroelectric Memories (FeRAMs) with logic circuits and/or microcontrollers. These devices and stand-alone memories constitute the main thrust of applications of ferroelectric memories. The problems associated with embedding test the robustness and compatibility of the FeRAM process with established CMOS integrated circuits. As integrated circuits technology advances in lithography, FeRAMs meet the challenge, but new problems appear. In this review, existing embedded FeRAMs of the 0.8/0.6 μ generation will be discussed. A program for the 0.35/0.25 μ generation, and the 0.18 μ challenges are outlined and addressed. The paper also reviews the application of FeRAM Smart Cards. This application is becoming the best example of embedded FeRAMs in which to demonstrate the “System-One-Chip” technology direction. Smart Card ICs clearly take advantage of the low power, high-write speed and long endurance characteristics of Ferroelectric Memories.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009991026077
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    Paper (German National Licenses)
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