Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 2680-2682
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Use of iodine for in situ etching of GaAs, AlAs, and InAs in solid-source molecular-beam epitaxy has been explored. Reflectance high-energy electron-diffraction intensity oscillations have been observed during iodine etching of GaAs and InAs, indicating a molecular layer-by-layer nature of material removal. Etch rates of GaAs and InAs determined from the period of the oscillations are comparable for a given iodine flux. Secondary-ion-mass spectroscopy depth profiles indicate that the etching of AlAs is negligible, and that iodine can be used as a selective etch which stops on AlAs or AlGaAs layers. Electrical properties of GaAs layers grown with an iodine beam impinging on the surface are comparable to those of the layers grown without iodine. Use of iodine for the surface cleaning of GaAs has also been examined. Our results show that iodine etching prior to growth reduces the level of carbon contamination at the substrate epilayer interface. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117676
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