ISSN:
1551-2916
Source:
Blackwell Publishing Journal Backfiles 1879-2005
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
The densification of SnO2 (0.9 mol)–Sb2O3 (0.1 mol) solid solution without any additives was studied by conventional and field-activated sintering technique (FAST). FAST sintering achieved a relative density value of 92.4% at 1163 K for 10 min versus 61.3% in conventional sintering at 1273 K for 3 h. An abnormal reduction of the IR transmittance and a semiconductor defect structure with only one donor level in the SnO2 energy gap were noticed in the FAST-sintered as compared with the conventionally sintered Sn0.82Sb0.18O2 solid solution. A high charge carrier concentration (i.e., electronic conduction) was shown in the FAST-sintered sample by conductivity measurements and the negative values of the Seebeck coefficient.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1111/j.1151-2916.2003.tb03393.x
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