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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1884-1886 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin, coherently strained Sn/Si and SnxSi1−x/Si alloy quantum well structures with substitutional Sn incorporation far in excess of the equilibrium solubility limit have been fabricated via substrate temperature and growth flux modulations in molecular beam epitaxy. Sn/Si single and multiple quantum wells with Sn coverage up to 1.3 ML, Sn0.05Si0.95/Si multiple quantum wells of up to 2.0 nm, and Sn0.16Si0.84/Si multiple quantum wells of up to 1.1 nm are determined to be pseudomorphic, and coverage-dependent Sn segregation dynamics are observed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 30 (1995), S. 5479-5483 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The fracture toughness of the refractory hardmetal Ti5Si3, with a grain size between 5 and 6 μm, was measured using the controlled-flaw method in conjunction with the miniaturized disc-bend test. The specimens used in these experiments were 3 mm diameter and varied in thickness from 150–450 μm. They were indented using a Vickers pyramid indentor to indention loads varying from 2.9–79.2 N. Indentation cracking was experienced at all indentation loads, and R-curve behaviour was exhibited. The fracture toughness was determined to be 2.69 ± 0.21 MPam1/2 using a straightforward graphical procedure involving an empirical R-curve equation. This value is almost 30% higher than that of similar material (2.1 MPam1/2) with a larger grain size, suggesting that the fracture toughness of this material, which fractures intergranularly, might be grain-size dependent.
    Type of Medium: Electronic Resource
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