ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
This paper reports the fabrication of indium oxide (In2O3) films using a triethylindium andoxygen mixture. The deposition has been carried out on TiAlN substrates (200-350ºC). We haveestablished the correlation between the substrate temperature and the structural properties. The filmsdeposited at 300-350ºC were polycrystalline, whereas those deposited at 200ºC was close toamorphous. XRD analysis and SEM images indicated that the films grown at 350ºC had grainedstructures with the (222) preferred orientation. The room-temperature photoluminescence spectra ofthe In2O3 films exhibited a visible light emission
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.1597.pdf
Permalink