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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 124-126 (June 2007), p. 1621-1624 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The characteristics, such as electron temperature and the electron density, of CF4/Ardischarge in 2.45GHz microwave has been investigated by using a Langmuir probe with themicrowave power and position. The results showed that the electron temperature and the electrondensity decrease with increasing distance from the plasma source. Increasing power enhances thedissociation and ionization of gas, and increases the electron densities. The electron temperature wasdecreased by reducing the mean free path of electrons with increasing microwave power. The electrontemperature is 7.63 ~ 2.49 eV, and the electron density is 0.85×1011 ~ 4.3×1011 cm-3. From obtainedelectron energy distribution function, we known that high energy electron decreased with increasingmicrowave power and distance from the plasma source. The generated plasma by developed oursystem has good quality as results of Debye length λD = 35.8 ~ 67.3 μm, and Ln(ND) = 33.4 ~ 35.2
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 544-545 (May 2007), p. 701-704 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The decomposition characteristics of CF4 with Argon or oxygen in 2.45GHz microwavehas been investigated by using a Langmuir probe with variation of the microwave power and chamberpressure. For CF4/Ar and CF4/O2/Ar discharges, the ion density and the electron density decrease withincreasing microwave power. The electron temperature was decreased by reducing the mean free pathof electrons with increasing microwave power. Also with increasing pressure, the electrontemperature increase, and ion and electron density decrease by increase of inelastic collisionfrequency and of collision with the walls in the chamber. The electron temperature is 13.6 ~ 5.9 [eV],the electron density is 4.4×1010 ~ 2.2×1010 [cm-3] and ion density is 5.2×1011 ~ 4×1010 [cm-3].According as add oxygen, ion and electron density increased relatively comparing to CF4/Ardischarge. The electron temperature is 8.5 ~ 6.2 [eV], the electron and ion density is 5.1×1010 ~2.1×1010 [cm-3] and 3.7×1011 ~ 7.3×1010 [cm-3], respectively
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 317-318 (Aug. 2006), p. 7-10 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In order to fabricate an alumina ceramics with high density at low sintering temperature,nanosized γ–Al2O3 powders with average size of 9.7 nm were added to microsized γ–Al2O3powders with 2 #m and they were well mixed. Its sintering behavior was studied in the temperaturerange of 1000oC to 1300oC and in holding time from 1 hour to 10 hours. Compacted samples with adifferent mixed ratio of nanosized and microsized Al2O3 powders (N/M ratio) were prepared andpressured at 1 GPa in a uniaxial direction. The phase transformation from γ–Al2O3 to α–Al2O3 takesplace at 1100oC for 1hour sintering in all compacted samples. This rate is increased with increasingN/M ratio. The relative density varied from 70% to 95% depending on temperature and N/M ratio.With increasing sintering temperature from 1000oC to 1300oC, it was changed from 70% to 93%.Especially, the relative density was enhanced about 9% higher than that of only microsized sampleby only 10 wt% addition of nanosized powders
    Type of Medium: Electronic Resource
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