Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Two-dimensional surface band structure of operating light emitting devices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 107-113 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on measurements of two-dimensional potential distribution with nanometer spatial resolution of operating light emitting diodes. By measuring the contact potential difference between an atomic force microscope tip and the cleaved surface of the light emitting diode, we were able to measure the device surface potential distribution. These measurements enable us to accurately locate the metallurgical junction of the light emitting device, and to measure the dependence of the built-in voltage on applied external bias. As the device is forward biased, the junction built-in voltage decreases up to flat band conditions, and then inverted. It is shown that the potential distribution across the pn junction is governed by self-absorption of the sub-bandgap diode emission. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370706
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Determining band offsets using surface photovoltage spectroscopy: The InP/In0.53Ga0.47As heterojunction (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2587-2589 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A direct technique for determining band offsets at semiconductor heterojunctions is presented, which is applicable to at least any type I heterojunction, where the top layer doping is sufficiently low. The technique is based on surface photovoltage spectroscopy measurements as a function of overlayer thickness. A numerically simulated example shows that the band offset is a very strong function of the critical overlayer thickness, at which the overlayer contribution to the surface photovoltage spectrum appears. The method is applied to the technologically important InP/InGaAs heterojunction and is shown to yield the commonly accepted band offset value. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117708
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 650-652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic properties of a GaAs/AlGaAs heterojunction bipolar transistor (HBT) structure have been studied by surface photovoltage spectroscopy. The p-base band-gap narrowing has been determined and confirmed by numerical simulation. Based on the shape of the surface photovoltage spectrum, it is possible to monitor the doping level and evaluate the minority-carrier mobility. This work demonstrates the power of the technique as a precision tool for HBT quality control. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121936
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...