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  • 1
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing characteristics of bulk AlInAs/InP and AlInAs/GaInAs/InP high electron mobility transistor structures with planar silicon doping (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3798-3802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of high temperature rapid thermal annealing processes on carrier concentration and mobility of bulk AlInAs and AlInAs/GaInAs high electron mobility transistor structures with planar Si doping are studied. At annealing temperatures of 700 °C and 800 °C, slight reduction in mobilities and carrier concentration are observed in samples annealed with a Si3N4 cap or GaAs pieces in close proximity. The reduction in mobility is thought to be due to enhanced diffusion of the donor Si atoms towards the two-dimensional electron gas channel. Preferential vacancy enhanced diffusion of Si atoms towards the surface is projected to be responsible for the loss in carrier concentration. At these annealing temperatures, the reduction in mobility in the samples annealed with SiO2 capping is more pronounced, and is as high as 80% at the measurement temperature of 15 K. This behavior is attributed to the outdiffusion of Ga and In atoms into the oxide thereby creating vacancies and resulting in interface mixing. Reduction in mobility and carrier concentration are much more substantial in the 900 °C anneals done with Si3N4 cap and GaAs pieces in close proximity. This indicates the destruction of the heterostructure integrity of the AlInAs/GaInAs interface. For the particular anneal with a SiO2 cap at this temperature, the carrier concentration increases above its reference value due to effective doping of the ternary material by the back-diffusing Si atoms from the SiO2 cap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352277
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  • 2
    Electronic Resource
    Electronic Resource
    Depletion region effects in Mg-doped GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 770-775 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deep nature of the Mg acceptor will have important implications for the performance of high-speed GaN-based bipolar devices. In this work, the effect of the deep acceptor on the band bending within the depletion region is examined in detail. The width of the transition region, which separates the mobile holes from the space-charge edge, is carefully investigated. High-frequency modulation of the depletion region is discussed for both the large- and small-signal cases. For the small-signal case, calculated results are compared to experimental measurements of frequency-dependent capacitance which have been performed on Mg-doped GaN samples. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371939
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  • 3
    Electronic Resource
    Electronic Resource
    High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3147-3149 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-aligned AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with high transconductances have been demonstrated on a sapphire substrate. Source and drain were selectively regrown with ∼1700 Å of n-GaN adjacent to the gate electrode. Source resistance was reduced to 0.95 Ω mm from 1.4 to 1.8 Ω mm with conventional GaN-based MODFETs. These self-aligned devices show a record high value of extrinsic transconductance ∼400 mS/mm for AlGaN/GaN MODFETs with a gate length of 1.2 μm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122701
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  • 4
    Electronic Resource
    Electronic Resource
    Dipole scattering in polarization induced III–V nitride two-dimensional electron gases (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4734-4738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Unusually large spontaneous and piezoelectric fields in the III–V nitrides have led to the making of an entirely new class of two-dimensional electron gas. Fluctuation from a perfectly periodic binary structure in highly polar semiconductor alloys present the same physical situation as a random distribution of microscopic dipoles. The excess dipole distribution in the barrier layers is evaluated by a method similar to the virtual crystal approximation. It is shown that the mobility of electrons in the two-dimensional electron gas formed in highly polar heterostructures is intrinsically limited by scattering from such dipoles. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311832
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  • 5
    Electronic Resource
    Electronic Resource
    Heavy doping effects in Mg-doped GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1832-1835 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of p-type Mg-doped GaN are investigated through variable-temperature Hall effect measurements. Samples with a range of Mg-doping concentrations were prepared by metalorganic chemical vapor phase deposition. A number of phenomena are observed as the dopant density is increased to the high values typically used in device applications: the effective acceptor energy depth decreases from 190 to 112 meV, impurity conduction at low temperature becomes more prominent, the compensation ratio increases, and the valence band mobility drops sharply. The measured doping efficiency drops in samples with Mg concentration above 2×1020 cm−3. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372098
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  • 6
    Electronic Resource
    Electronic Resource
    Low temperature limits to molecular beam epitaxy of GaAs (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2335-2337 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report reflection high-energy electron diffraction oscillations during molecular beam epitaxy of GaAs at temperatures as low as 125 °C using As2 as the arsenic source. At a substrate temperature of 200 °C, the As:Ga ratio is shown to be the critical parameter which determines the amplitude of these oscillations. The largest amplitude oscillations are obtained when the As:Ga ratio is about 1:1. In order for these oscillations to occur, the arriving atoms must have some surface mobility. Monte Carlo simulations show that step density oscillations with a period corresponding to one monolayer are expected if the incident atoms are allowed to move as little as one lattice site upon arrival at the surface. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112734
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  • 7
    Electronic Resource
    Electronic Resource
    Polarization-enhanced Mg doping of AlGaN/GaN superlattices (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2444-2446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hole-transport properties of Mg-doped AlGaN/GaN superlattices are carefully examined. Variable-temperature Hall-effect measurements indicate that the use of such superlattices enhances the average hole concentration at a temperature of 120 K by over five orders of magnitude compared to a bulk GaN film (the enhancement at room temperature is a factor of 9). An unusual modulation-doping scheme, which has been realized using molecular-beam epitaxy, has yielded high-hole-mobility superlattices and conclusively demonstrated the pivotal role of piezoelectric and spontaneous polarization in determining the band structure of the superlattices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125042
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  • 8
    Electronic Resource
    Electronic Resource
    AlGaAs/GaAs high electron mobility transistor with a low-temperature grown GaAs ion damage blocking layer (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 494-496 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully used a thin layer (∼200 Å) of annealed low-temperature GaAs (LT-GaAs) to reduce ion damage that would occur during the formation of a dry-etch gate recess of a high electron mobility transistor. Compared to structures without an ion damage blocking layer, the devices with a thin layer of LT-GaAs are more robust against ion damage. This is important for the application of ion-assisted processing to the fabrication of electronic devices, such as dry etching used to achieve gate recessing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119608
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  • 9
    Electronic Resource
    Electronic Resource
    Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3681-3683 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High p-type conductivity of Mg-doped AlGaN/GaN superlattices is demonstrated. The measured hole concentration at room temperature is over 2.5×1018 cm−3, more than ten times that obtained in bulk AlGaN layers, and lateral resistivity as low as 0.2 Ω cm is realized. The temperature dependence of the resistivity is drastically reduced compared to bulk films, providing evidence of the formation of a confined hole gas. Valence band bending due primarily to piezoelectric and spontaneous polarization is identified as the origin of these effects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123220
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  • 10
    Electronic Resource
    Electronic Resource
    Improvement in low energy ion-induced damage with a low temperature GaAs capping layer (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1728-1730 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin capping layer of annealed GaAs (∼210 A(ring)) grown at low temperature (LT-GaAs) can effectively block incident ions from penetrating into the growth substrate. Ion-bombarded, multiple quantum well structures capped by an annealed LT-GaAs layer show a dramatic improvement in the photoluminescence, compared to samples capped with "normal'' GaAs. The improvement appears to be correlated with the microstructures of the LT-GaAs, since the improvement is particularly notable for samples annealed at 600 °C. This improvement in low energy ion-induced damage is primarily the result of the reduced channeling of ions through the LT-GaAs layer. These results suggest a potential application of LT-GaAs in reducing ion damage and underscore the importance of the microstructure of arsenic precipitates in LT-GaAs layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118011
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