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  • 1
    Electronic Resource
    Electronic Resource
    Structural and optical properties of 1.3 μm wavelength tensile-strained InGaAsP multiquantum wells grown by metalorganic molecular beam epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1427-1433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tensile strained 0.5%–1.8% InGaAsP multiquantum wells (MQWs) grown by metalorganic molecular beam epitaxy are comprehensively characterized by using transmission electron microscopy (TEM), x-ray, photoluminescence (PL), lifetime, photocurrent, and absorption measurements. Cross-sectional and plan-view TEM photos reveal that, irrespective of the strain values, the tensile strained well layers have flat surfaces in the growth direction and consist of fine parallelepipeds laterally. Optimizing the strain compensation conditions, i.e., keeping the net strain less than 0.3%, makes it possible to grow high optical quality MQWs with 1.8%-strained well layers. As the well strain increases from 0.5% to 1.45%, however, the PL intensities of the misfit-dislocation-free MQWs monotonically decrease and the minority carrier lifetime decreases from 1.4 to 0.9 nsec. The laser threshold current density decreased with increasing well strain in the 0.5%–1.3% range, decreased to 0.6 kA/cm2 at 1.3% and slightly increased in the 1.45%–1.8% range. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364180
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  • 2
    Electronic Resource
    Electronic Resource
    Metalorganic molecular beam epitaxy of strain-compensated InAsP/InGaAsP multi-quantum-well lasers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1233-1237 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain-compensated InAsP/InGaAsP multi-quantum-wells (MQWs) grown by metalorganic molecular beam epitaxy (MOMBE) are characterized by conventional photoluminescence (PL), micro-PL, transmission electron microscopy, and x-ray diffraction measurements and applied to fabricate 1.3 μm wavelength laser diodes. These methods reveal that there is no deterioration in the optical properties or structure of strain-compensated MQWs having up to 25 wells, which means that the critical thickness of InAsP grown by MOMBE exceeds 1000 A(ring). The critical conditions of strain and thickness over which misfit dislocations are generated are determined for the MQWs. The MQW lasers with ten wells (Lz=55 A(ring)) have no misfit dislocations and have uniform threshold current densities of 0.9±0.1 kA/cm2. The maximum operating temperature Tmax of the lasers increases with increasing well number, the highest Tmax is 155 °C, which is obtained for MQW lasers with 15 wells. The lasers have no problems in terms of long-term reliability. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361016
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of heavily carbon-doped InGaAsP layers grown by chemical beam epitaxy using tetrabromide (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2482-2484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon doping in InGaAsP films using tetrabromide (CBr4) in chemical beam epitaxy has been studied, focusing on the relationship between the composition and the carrier concentration. The films with an equivalent wavelength of more than 1.4 μm have p-type conduction while the films with less than 1.3 μm have n-type conduction. Specifically, the hole concentration decreases from 7×1019 to 7×1018 cm−3 with decreasing wavelength in the 1.4–1.66 μm range, while electron concentration increases from 5×1018 to 2×1019 cm−3 with decreasing wavelength in the 1.1–1.3 μm range. Secondary-ion mass spectroscopy reveals that the incorporated carbon atom concentration is the same between an InGaAs film and a 1.4 μm equivalent wavelength InGaAsP film under a fixed CBr4 flux. Increase in gallium mole fraction monotonously increases hole concentrations under a fixed group-V mole fraction. We have found that the In1−xGaxAs1−yPy conduction type is mainly determined by two parameters: the Ga and P mole fractions, i.e., p type if x〉y. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122489
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  • 4
    Electronic Resource
    Electronic Resource
    Be–Zn interdiffusion and its influence on InGaAsP lasers fabricated by hybrid growth of chemical beam epitaxy and metalorganic vapor phase epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2846-2848 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the dopant redistribution between a chemical beam epitaxy (CBE) grown InGaAsP laser structure and a metalorganic vapor phase epitaxy overgrown InP layer. Secondary ion mass spectroscopy analysis reveals that Zn and Be atoms deeply interdiffuse in the adjacent InP layers for a Zn doping of 1018 cm−3 and that a fraction of Zn atoms go through the CBE InP and penetrate the laser structure guide layer. We have found that the Zn outdiffusion is significantly suppressed by reducing the Be doping concentration from 1018 to 5×1017 cm−3. As a result, for tensile-strained InGaAsP multiquantum well (MQW) buried-heterostructure (BH) lasers, the threshold current and internal loss decrease from 13 to 9 mA and 15 to 10 cm−1 by lowering the Be doping, respectively. InAsP MQW BH lasers have an internal loss of 5.5 cm−1. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119053
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  • 5
    Electronic Resource
    Electronic Resource
    Metalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3106-3108 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of a four-period multiple quantum well (MQW) structure with 115-Å-thick, +1.65% strained wells by metalorganic molecular beam epitaxy and its application to 2 μm wavelength lasers. Transmission electron microscopy and photoluminescence measurements reveal that the structural and optical properties of MQW are sensitive to the barrier strain: the values of barrier strain required for MQW with both flat barrier-well interfaces and strong photoluminescence fall within a small range from −0.17% to +0.14%. The double-crystal x-ray diffraction pattern of the MQW remains unchanged before and after annealing at 620 °C for 2.5 h. Buried heterostructure lasers fabricated using metalorganic vapor phase epitaxy regrowth have an emission wavelength of 2.07 μm under a continuous operation current of 120 mA at 55 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121561
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of net strain, strain type, and temperature on the critical thickness of In(Ga)AsP-strained multi quantum wells (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4775-4780 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examined the critical thickness of strained multi quantum wells (MQWs) consisting of InAsP/InGaAsP and InGaAsP/InGaAsP. More than 50 MQWs with different total thicknesses, well strain, and well thicknesses were prepared by metalorganic molecular beam epitaxy (MOMBE) or metalorganic vapor phase epitaxy (MOVPE) to study the influence of net strain, strain type, and temperature on critical thickness. The microscopic photoluminescence method was used mainly to observe misfit dislocations in the MQWs. Three kinds of net strain-critical thickness curves were experimentally determined, i.e., the curves for compressive as well as tensile strained MQWs grown by MOMBE and that for compressive strained MQWs grown by MOVPE. We found that the above three curves coincide with each other and differ greatly from the Matthews' [J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974)] theoretical curve in a low-net strain range of less than 0.5%. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368719
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