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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 57 (1953), S. 860-863 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 84 (1980), S. 3172-3178 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monomolecular layers of MoS2 are used as substrates for the preparation of fine particles of magnetic materials. Particles of Ni, Co, and Fe and their alloys and various ferrites, hydroxides, and carbides have been produced. Some of these particles have magnetizations and coercivity values suitable for use in information storage technologies. Although attempts to produce multilayers of (MoS2/Fen)m by chemical methods have not succeeded, new pathways to improved magnetic materials have been found.〈UFDA〉
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4970-4974 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The exfoliation of WS2, the separation of this layer compound into single molecular layers suspended in solution, was found more difficult than the exfoliation of MoS2 reported earlier. The difficulty was found to be the resistance of the WS2 to intercalation. By ultrasonic treatments while exposed to hexane plus n-butylithium, the lithium was found to intercalate, and exfoliation by immersion in water became possible. Restacking the WS2 by drying in a basic solution led to much larger crystallites than the as-received material, while flocculating by decreasing the pH led to small crystallites with a high density of edge planes. Nickel and aluminum inclusions lead to poor restacking, with no regular c spacing between WS2 basal planes. The more vigorous exfoliation procedure applied to MoS2 also leads to loss of regular c spacing (the x-ray diffraction pattern is essentially that of single molecular layers).
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial and engineering chemistry 4 (1965), S. 176-181 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4462-4465 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimentally determined solar cell parameters of a large number of metal-insulator-semiconductor cells on damaged p-type silicon are compared with the dislocation conductivity model [J. Appl. Phys. 60, 406 (1986)]. Cell behavior is explained in terms of conducting dislocations. The variation of major cell parameters with the density of dislocations is calculated using the model. It is predicted that silicon with mild surface damage where dislocation density is less than about 105 cm−2 can produce solar cells of almost equal quality as dislocation-free Si.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    International journal of biometeorology 20 (1976), S. 337-343 
    ISSN: 1432-1254
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geography , Physics
    Notes: Abstract Sixty pigs were used to study the effects of air movement (0.05, 0.5, and 1.0 m/s) at constant air temperatures of either 5.6 or 11.1°C above optimum, and at 3 different weight ranges (36–50kg, 54–68 kg, and 73–86 kg) during the growing-finishing stages. An air velocity of 0.5 m/s produced significantly greater weight gain and feed conversion than did 0.05 m/s. An air velocity of 1.0 m/s produced intermediate results.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    International journal of biometeorology 13 (1969), S. 135-139 
    ISSN: 1432-1254
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geography , Physics
    Description / Table of Contents: Zusammenfassung Es wurde der Einfluss von 3 verschiedenen Feuchtigkeits-bedingungen (%RF) bei 22°, 28° und 33°C auf die Gewichtszunahme und den Futterverzehr von Schweinen untersucht, die in 27 Gruppen zu je 3 Tieren aufgeteilt waren. Bei jeder Temperatur führte die Erhöhung der Feuchtigkeit zur Senkung des Futterverzehrs und der Gewichtszunahme. Die Zuwachswerte fielen zusammen mit den vorausgesagten Werten für den evaporativen Wärmeverlust bei der Atmung. Die Feuchtigkeit hatte nur eine geringe Wirkung auf die Futterausnutzung, die Rektaltemperatur und die Hauttemperatur.
    Abstract: Resume On a recherché les répercussions de 3 degrés d'humidite (% hum. rélative) différentes par 22°, 28° et 33°C sur l'augmentation de poids et la consommation alimentaire de procs. Ces derniers étaient répartis en 27 groupes de 3 animaux chacun. Pour toutes les températures, une augmentation de l'humidité se traduit par une diminution de l'alimentation et de la prise de poids. Les valeurs de croissance correspondent aux valeurs calculées de la perte de chaleur due à l'évaporation par les processus respiratoires. L'humidité n'a eu que peu d'incidence sur l'utilisation des rations alimentaires ou sur les températures rectale et cutanée.
    Notes: Abstract Twenty-seven groups of pigs of three each were raised in controlled-environment houses for 12 to 14 weeks. Three levels of humidity (% RH) were compared at temperatures of 22°, 28° and 33°C. Rate of gain and feed consumption decreased with increasing humidity at any of these temperatures, with effect of humidity increasing with increasing temperature. The rate-of-gain data were consistent with rates predicted from analysis of the effect of humidity on evaporative heat loss with respiration. Humidity had little effect on feed efficiency, rectal temperature, or skin temperature.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1432-0630
    Keywords: PACS: 85.30; 77.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  A simplified analogue to an Ion-Sensitive Field-Effect Transistor (ISFET) was tested in the presence of ions. The gate electrode in an ISFET is an aqueous solution, unlike in a Metal-Oxide Field-Effect Transistor (MOSFET) where the gate is a metal. A problem with the ISFET is that the insulating oxide between the silicon and the solution is slowly penetrated by various ions such as OH− or Na+ causing a change in the characteristics of the device. The application of thin alumina platelets and thin MoS2 films as a protective insulating layer, when deposited over the insulating silicon oxide, was tested against the penetration of ions. It is shown that there is a significant decrease in the ion penetration through to the silicon oxide layer, depending on the applied bias, when the oxide is covered with thin alumina or MoS2 layers. The effect of different ions and ion concentrations are presented. Suggestions for further improvement are made.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1432-0630
    Keywords: 85.30 ; 77.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simplified analogue to an Ion-Sensitive Field-Effect Transistor (ISFET) was tested in the presence of ions. The gate electrode in an ISFET is an aqueous solution, unlike in a Metal-Oxide Field-Effect Transistor (MOSFET) where the gate is a metal. A problem with the ISFET is that the insulating oxide between the silicon and the solution is slowly penetrated by various ions such as OH− or Na+ causing a change in the characteristics of the device. The application of thin alumina platelets and thin MoS2 films as a protective insulating layer, when deposited over the insulating silicon oxide, was tested against the penetration of ions. It is shown that there is a significant decrease in the ion penetration through to the silicon oxide layer, depending on the applied bias, when the oxide is covered with thin alumina or MoS2 layers. The effect of different ions and ion concentrations are presented. Suggestions for further improvement are made.
    Type of Medium: Electronic Resource
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