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  • 1
    Electronic Resource
    Electronic Resource
    Space-charge-perturbed electrophoresis in nonpolar colloidal dispersions (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6796-6803 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper reports the observation of bipolar, space-charge-perturbed transport in colloidal dispersions using an experimental technique that time-resolves electrophoresis in nonpolar colloidal systems. Unlike existing methods for studying electrophoresis, this technique can be applied to dispersions of diverse types and concentrations over a wide range of electric fields, including the space-charge-perturbed conditions often encountered in practical applications. The phenomenon is investigated as a special case of dielectric relaxation in a leaky capacitor connected in series to a perfect one. Using the first principle charge transport theory, such dielectric relaxation, occurring under the non-Ohmic supply and space-charge-perturbed transport conditions, is shown to differ from that expected by the conventional equivalent-circuit treatment. The combined theoretical analysis and the experimental technique provides a means for independently determining the densities and mobilities of charged species in such systems. Using a liquid developer for electrography as a prototype system, results are presented that illustrate the power of the technique as a new tool to provide new insights into the generic transport and generation mechanisms of charged species in colloidal systems. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363807
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  • 2
    Electronic Resource
    Electronic Resource
    Photoelectronic properties of hydrogenated amorphous silicon/silicon oxide heterostructures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5306-5312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A glow-discharge hydrogenated amorphous silicon/insulator heterostructure has been characterized by a range of measurements including optical absorption, temperature dependence of photo- and dark conductivity, internal photoemission, xerographic discharge, and spectral dependence of photoconductivity. Efficient injection of dark and photocarriers from amorphous hydrogenated silicon into, and transport through, relatively thick SiOx:N:H has been achieved. Unlike the conventional thermal oxide on Si, no significant energy barrier to injection is found in the plasma-deposited heterostructure. The use of the structure as a potential xerographic device is demonstrated. A mobility lifetime product as high as 6×10−10 cm2/V and a transport process with an activation energy of ∼0.3 eV is found for electrons in the SiOx:N:H films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334846
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  • 3
    Electronic Resource
    Electronic Resource
    Infrared absorption in boron-doped diamond thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1908-1910 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed studies of infrared absorption in nominally undoped and boron-doped, free-standing diamond thin films are reported. Difference measurements reveal absorption at 1300 cm−1 (0.16 eV) due to boron-induced single phonon, vibronic excitations. A relatively sharp peak at about 2420 cm−1 (0.30 eV), a stronger, broader band centered at 3060 cm−1 (0.38 eV), and a weak, broad peak at 4200 cm−1 (0.52 eV), are identified as electronic transitions, with or without phonon assistance, of the boron acceptor. These results provide important confirmation of the hitherto presumed substitutional nature of boron doping and recent suggestions concerning electronic transport mechanisms in diamond thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105070
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  • 4
    Electronic Resource
    Electronic Resource
    Boron doping of diamond thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1121-1123 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical conductivity of diamond thin films produced by the hot-filament technique is found to increase when diborane is incorporated in the precursor gas mixture. The combination of well-defined bulk conductivity measurements with quantitative secondary-ion mass spectrometry and Raman spectroscopy shows that the conductivity increase is associated with atomic boron doping and rules out any significant role for a graphitic-type component.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101676
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  • 5
    Electronic Resource
    Electronic Resource
    Lithium doping and photoemission of diamond thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1907-1909 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond films have been in-diffused with lithium in an effort to produce n-type diamond by interstitial doping. Although lithium incorporation was established, only small changes in electrical conductivity and no thermionic emission from donor levels, which should lie only a few tenths of an electron volt below the vacuum level, were observed. To account for these observations, studies of the spectral dependence of external photoemission of lithium-doped and undoped films were undertaken. These indicate that the lithium donors are compensated by high densities of acceptor states distributed over several electron volts. This first, direct observation of band-gap states in diamond films accounts for a number of reported properties including their relatively high electrical conductivity and small field effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104008
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  • 6
    Electronic Resource
    Electronic Resource
    Photosensitization of diamond thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1898-1900 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photosensitization of diamond thin films, prepared by the hot-filament technique, has been achieved with thin overcoatings of hydrogenated amorphous silicon. It is observed that injection of electrons, photogenerated in the amorphous silicon, proceeds with efficiencies approaching unity. To reconcile this with the reported electron energy structures of these two materials, the presence of localized, acceptor-like states 2 eV above the valence band of diamond must be invoked. In addition their density must be sufficiently high to account for the inferred lower limit of 10−8 cm2 /V for the electron range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103057
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  • 7
    Electronic Resource
    Electronic Resource
    Electronic carrier transport and photogeneration in buckminsterfullerene films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1829-1831 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Information concerning electronic carrier transport and photogeneration in films of undoped C60/70 has been obtained from photoinduced xerographic discharge curves in sublimed films up to 40 μm in thickness. The results, using strongly absorbed light, unambiguously reveal that the electron range, μτ, where μ is the electron drift mobility and τ the deep trapping lifetime, is ∼10−7 cm2/V. By contrast, a barely detectable discharge is observed to be associated with holes. The photogeneration efficiency for electrons is field dependent with a value at 4000 A(ring) of 5×10−2 at a field of 2×105 V/cm. These results are discussed in a context where both charge photogeneration and transport in undoped C60/70 involve localized electronic states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108388
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  • 8
    Electronic Resource
    Electronic Resource
    Density of states distribution in diamond thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 455-457 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Space-charge-limited hole currents in nominally undoped diamond thin films have been studied using thin, highly boron-doped (p+) diamond layers as injecting contacts. The results obtained from these p+-p-Si structures have been analyzed to determine, for the first time, the bulk distribution of localized states N(E) in polycrystalline diamond thin films. The values of N(E), covering an energy range of about 0.8–0.6 eV above the valence band, indicate that the density of states at 0.8 eV is about 1015 cm−3 eV−1 but rises rapidly, within the 0.2 eV, to about 1018 cm−3 eV−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105461
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  • 9
    Electronic Resource
    Electronic Resource
    Compensation effects in nitrogen-doped diamond thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3148-3150 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond thin films have been doped with nitrogen during growth by the hot-filament technique. For nitrogen concentrations in the films, determined by quantitative secondary ion-mass spectroscopy (SIMS) exceeding about 3×1018 atoms/cc, a decrease of several orders of magnitude is observed in the electrical conductivity for temperatures at or above room temperature. Qualitatively, this decrease is as expected, assuming compensation of existing acceptor states in nominally undoped diamond thin films by substitutional nitrogen which is known to introduce a deep-lying donor level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105767
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  • 10
    Electronic Resource
    Electronic Resource
    Temperature dependence of photoconductivity in buckminsterfullerene films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1735-1737 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the temperature dependence from 330 to 230 K of the photoconductivity measured in sublimed films of buckminsterfullerene, specifically, C60/70, up to 3 μm thick. In contrast to the temperature dependence of the dark conductivity, where reversible structure, associated with the onset of a phase transition to orientational ordering below 250 K, is observed, the photoconductivity shows an essentially monotonic decrease to lower temperatures. This provides additional evidence that the thermal generation rate increases as the C60/70 becomes orientationally ordered. It also suggests that the increased order below the transition temperature does not lead to significantly increased carrier mobilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107201
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