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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4953-4960 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results from a vacuum-ultraviolet (VUV) "photoabsorption imaging" technique based on the measurement of the time and space resolved absorption of a quasimonochromatic VUV beam from a laser plasma light source. The use of VUV radiation as a probe beam permits direct access to resonance lines of (singly and more highly charged) ions and also to the resonant and nonresonant continua of atoms and ions. In this experiment we have confined ourselves to measurements using the 3p–3d resonances of Ca, Ca+, and Ca2+ as markers of the temporal and spatial distribution of ground state atoms and ions in an expanding laser plasma plume. We show how time resolved column density maps may be extracted from such images. In addition we have extracted plasma plume velocities from the data, which compare well with an analytical laser ablation model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1497-1499 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed extreme-ultraviolet (XUV) "line-free" continuum emission from laser plasmas of high atomic number elements using targets irradiated with 248 nm laser pulses of 7 ps duration at a power density of ∼1013 W/cm2. Using both dispersive spectroscopy and streak camera detection, the spectral and temporal evolution of XUV continuum emission for several target atomic numbers has been measured on a time scale with an upper limit of several hundred picoseconds limited by amplified spontaneous emission. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3301-3303 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial GaN films of thickness ∼1 μm have been grown on sapphire(0001) and GaAs(001) substrates using the liquid-target pulsed-laser-deposition technique in a 5 Torr nitrogen atmosphere. Detailed x-ray diffraction and photoluminescence studies were carried out for both types of samples. Significantly enhanced low-temperature photoluminescence emissions at 3.368 eV (I3) and 3.310 eV (I4) were observed for the material deposited on a GaAs(001) substrate at ∼800 °C. We propose a model to explain the emission mechanism for both lines in which the electrons and holes are confined in cubic inclusions within the hexagonal material, analogously to a type-I quantum well. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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