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Characterization of strain in Si1−xGex films using multiple angle of incidence ellipsometry (2000)

Mukerjee, Subroto ; Venkataraman, V.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 3529-3531

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: In this letter we characterize strain in Si1−xGex based heterojunction bipolar transistors and modulation doped field effect transistors grown by rapid thermal chemical vapor deposition exploiting the phenomenon of strain-induced birefringence. The technique used is multiple angle of incidence ellipsometry at a wavelength of 670 nm to measure the ordinary and extraordinary refractive indices of the Si1−xGex films. We report measurements on thin fully strained films (with thicknesses less than the critical thickness) with Ge concentration varying from 9% to 40% with an accuracy of the order of 1 part in 104 and propose an empirical relation between the difference in the ordinary and extraordinary refractive indices (δn) and the Ge concentration (x) given by δn(x)=0.18x−0.12x2. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1329165

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