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  • 1
    Electronic Resource
    Electronic Resource
    An unbalanced magnetron sputtering device for low and medium pressures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4961-4966 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The discharge characteristics of an unbalanced magnetron sputtering device, equipped with a 100-mm-diam planar circular target and with two electromagnetic coils, have been analyzed in a range of operation pressures from 0.02 to 1 Pa. The variation of discharge extinction and ignition pressures and target voltage is presented as a function of the ratio of currents in the magnetron coils and discharge current. A maximum discharge current beyond which it is not possible to sustain the discharge at low pressures has been observed. This extinction current increases with operating pressures. An explanation for the effect is based on the loss of gas from the plasma due to gas heating with energetic sputtered particles and subsequent gas density rarefaction in the near target region. Higher pressure is thus necessary to keep constant gas density in the magnetron plasma when the discharge current is increased. The magnetic field configuration is presented for several values of the ratio of currents in the magnetron coils and correlated to the variation of discharge extinction and ignition pressures, extinction current, and target voltage. The low pressure operation of the magnetron strongly depends on optimization of the magnetic field shape on the sputtered target. The deposition rate of titanium films is a linear function of magnetron power up to 2.5 kW and does not depend on Ar pressure in the pressure range studied (0.08–0.6 Pa). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146181
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of strain and temperature on the behavior of oxygen ion implanted manganese films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3573-3578 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain sensitive and temperature behavior of the oxygen ion implanted manganese films have been studied for their possible application as strain gauges. Films were subjected to different ion dosages and the resistance-strain behavior was studied. Also, the resistance variation of films with temperature was studied and TCR (temperature co-efficient of resistance) values were calculated. The structure and surface morphology of the films were examined using x-ray diffraction and scanning electron microscopy methods, respectively. The TCR value as low as 3.94×10−5/°C has been observed at lower annealing temperatures. It was found that both Mn and MnO2 phases exist in the film after annealing. Observed data indicate that metallic conduction is the predominant mechanism in these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357417
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  • 3
    Electronic Resource
    Electronic Resource
    Electron microscopy studies of ion implanted silicon for seeding electroless copper films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5709-5713 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of ion implantation induced electroless copper plating as an effective technique for micro electromechanical systems fabrication was explored by our group recently. This paper aims at investigating such implanted surfaces in order to understand the mechanism assisting the plating. Si was implanted with Pd+ ions at an ion energy of 19 keV in a metal vapour vacuum arc (MEVVA) implanter. The implantation dose ranged between 7×1014 and 2×1017 ions/cm2. The substrates were characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). TEM studies on these substrates indicated that implanted ions tend to form metallic clusters or agglomerates in the substrate. The electroless films nucleate at these clusters. An attempt was made to establish a relationship between implantation dose and cluster size. The topology of the electroless plated films was examined under SEM and the results are discussed in detail. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367425
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and compositional studies of magnetron-sputtered Nd–Fe–B thin films on Si(100) (1998)
    Springer
    Journal of materials science 33 (1998), S. 1349-1357 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The structure and composition of the Nd–Fe–B thin films deposited on Si(100) have been investigated. Films have been prepared by direct-current magnetron sputtering in pure argon and xenon sputter media separately. Deposition has been carried out keeping the substrates at room temperature and 360°C. These films were subjected to the post-deposition annealing to a temperature of 60O°C in a vacuum of 5×10−7 Torr. The stoichiometry and structure of these films were analysed and correlated to the deposition and annealing conditions. Films deposited in xenon sputter medium showed better crystalline properties than those sputtered in pure argon. This difference was attributed to the presence of reflected high-energy neutral gas particles in the argon medium. Films deposited in xenon were found to be relatively rich in boron compared with argon-sputtered films. Post-deposition annealing resulted in the interdiffusion at the interface between the film and substrate. The use of a SiO2 film as a barrier layer between the silicon substrate and the Nd–Fe–B film has been explored. Thermally grown SiO2 was found to be an effective diffusion barrier. © 1998 Chapman & Hall
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004314801755
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