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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 4199-4211 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report the effect of surface temperature on the state resolved translational energy distributions for H2 and D2 recombinatively desorbed from Cu(111). Sticking functions S(v,J,E) can be obtained by applying detailed balance arguments and follow the familiar error function form at high energy, consistent with previous permeation measurements [Rettner et al., J. Chem. Phys. 102, 4625 (1995)]. The widths of the sticking functions are identical for both isotopes and are independent of rotational state. S(E) broadens rapidly with increasing surface temperature, with a low energy component which is slightly larger than represented by an error function form. This is similar to the behavior seen on Ag(111) [Murphy et al., Phys. Rev. Lett. 78, 4458 (1997)] but on Cu(111) the low energy component remains a minor desorption channel. The broadening of S(E) can be explained in terms of a change in the distribution of barriers caused by local thermal displacement of the surface atoms, thermal activation of the surface producing sites where molecules can dissociate, or desorb, with a reduced translational activation barrier. At low energy sticking increases rapidly with surface temperature, with an activation energy of 0.54 and 0.60 eV for H2 and D2, respectively. These values are similar to the thermal activation energies calculated for translational excitation of H2/D2 and imply that thermal excitation of the surface is just as efficient as translational energy in promoting dissociation. The influence of surface temperature decreases with increasing translational energy as molecules become able to dissociate even on the static Cu(111) surface. By comparing the energy distributions for desorption with existing angular distributions we determine how the effective energy, Ee=E cosn(E) θ which contributes to adsorption–desorption, scales with translational energy. At translational energies near the threshold for sticking n(E)(approximate)2, sticking scales with the normal component of the translational energy and is not influenced by motion parallel to the surface. At lower energy n(E) drops towards zero, indicating that motion parallel to the surface aids dissociation, consistent with dissociation at a corrugated barrier. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 47 (1986), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The role of membrane polyunsaturated fatty acids (PUFAs) in the regulation of basal adenylate cyclase activity was examined in intact N1E-115 neuroblastoma cells. Addition of linoleic acid (50 μM) to the culture medium for 48 h resulted in a significant increase in phospholipid PUFA content and in a two- to fivefold increase in basal accumulation of cyclic AMP (cAMP). Both phenomena were reversed on removal of linoleate from the medium. PUFA enrichment stimulated cell proliferation by —20% without altering the relative proportion of cellular protein. The supplemented cells synthesized significantly larger amounts of prostaglandin (PG) E and D than did the controls; however, blockade of PG synthesis by indomethacin or ibuprofen did not alter cAMP formation. Supplemented cells contained higher levels of malondialdehyde (MDA) than did controls, and MDA formation was reduced by coculture with α-tocopherol; however, its inclusion in the medium did not affect cAMP accumulation. Linoleate-supplemented cells responded to cyclase-activating agonists to the same extent as did control cells. Responses to inhibitory agonists (e.g., isoproterenol and carbamylcholine) were altered, but not to a sufficient extent to account for the PUFA-dependent increases in basal adenylate cyclase activity.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 14039-14051 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 6954-6962 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have measured translational and internal state distributions for N2 desorbed from a Ru(001) surface following NH3 cracking at 900 K. Nitrogen is formed with a vibrational population inversion, P(v=1)/P(v=0)=1.4, but a subthermal rotational energy release, Trot(v=0)=630 K. The translational energy distributions show a peak at low energy with a tail extending up to ∼2 eV and a mean energy release of 0.62 eV for N2(v=0) and 0.61 eV for (v=1). The product state distributions indicate a preferential energy release into the N2 stretching coordinate with a relatively weak N2–surface repulsion. Density functional calculations for N2 dissociation on Ru(001) and Cu(111) have been performed to compare the shape of the potentials in the N2 stretching (d) and translational (Z) coordinates. These reveal a sharp curvature of the surface for Ru, the energy release occurring close to the surface over a narrow range of Z. We suggest that this behavior is the result of the presence of a metastable molecular state, bound close to the surface with a short N2 bond, as predicted by Mortensen et al. [J. Catalysis, 169, 85 (1997)]. We contrast the dynamics on Ru with that observed for N recombination on Cu(111) [Murphy et al., J. Chem. Phys. 109, 3619 (1998)], where the potential energy surface shows no evidence for a molecular chemisorption well. Detailed balance arguments predict that N2 dissociation on Ru(001) is highly activated, S(E) increasing by nine orders of magnitude between 0.1 and 2 eV translational energy. The vibrational population inversion implies that vibration promotes dissociation more efficiently than translational excitation, sticking having a vibrational efficacy of 1.3. The predicted S(E) are consistent with reports of a very low sticking probability (S〈10−9) on Ru(001) at thermal energies but in disagreement with recent molecular beam adsorption measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 3619-3628 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Nitrogen atoms adsorbed on Cu(111) desorb thermally from an ordered Cu(100)−c(2×2)N phase in a sharp, zero order desorption feature near 700 K with an activation barrier of 143 kJ mol−1. Detailed N2 product rovibrational state distributions have been measured following recombinative desorption from a 700 K Cu(111) surface exposed to a N atom beam, with an equilibrium N coverage θN≤10−2 ML. Although desorbing N2 is translationally and vibrationally hot, with a vibrational temperature of 5100 K and 4.2 eV of translational excitation perpendicular to the surface, rotation is excited with a temperature of just 910(±50) K for the vibrational ground state and 840(±250) K for (v=1). The energy released during recombinative desorption channels effectively into translational and vibrational motion, but not into rotational excitation. The angular distribution of recombinatively desorbed N2 is sharply peaked along the surface normal, P(θ)=cos(28±1) θ, indicating a mean energy release of 0.28 eV into translation parallel to the surface. This is inconsistent with 1D models of the translational energy release based on thermal motion parallel to the surface and a repulsive energy release directed along the surface normal. The dynamics can be described by a direct, repulsive model with a transition state at extended N2 separation, similar to the models developed for H2 dissociation on the same surface. We discuss the application of detailed balance to determine N2 sticking functions S(E,v,J) and, using a simple model for these functions, estimate a rotational efficacy of ∼0.23 for sticking of N2(v=0, J≤24) and a vibrational efficacy of 0.7 for N2(v=1). The dynamics are compared to the models developed for H2 dissociation and the role of molecular chemisorption states and the local desorption site discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth of nominally undoped GaN/AlxGa1−xN/GaN (x〈0.4) high mobility heterostructures with N-face or Ga-face polarity on sapphire substrates by plasma-induced molecular beam epitaxy (PIMBE) and metalorganic chemical vapor deposition in order to study the formation and electrical transport properties of polarization induced two-dimensional electron gases (2DEGs). By depositing a thin AlN nucleation layer on the sapphire substrates before the growth of a GaN buffer layer by PIMBE, we were able to change the polarity of the wurtzite films from N to Ga face. The switch in the polarity causes a change in the sign of the spontaneous and piezoelectric polarization directed along the c axis of the strained AlGaN barrier. As a consequence the polarization induced 2DEG is confined at different interfaces in heterostructures with different polarities. The transport properties of the 2DEGs in Ga- and N-face heterostructures were investigated by a combination of capacitance–voltage profiling, Hall effect, and Shubnikov-de Haas measurements. Dominant electron scattering mechanisms are studied in order to provide the knowledge necessary for further improvements of the electron transport properties and performance of AlGaN/GaN based "normal" (based on Ga-face heterostructures) and "inverted" (based on N-face heterostructures) high electron mobility transistors. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two dimensional electron gases in AlxGa1−xN/GaN based heterostructures, suitable for high electron mobility transistors, are induced by strong polarization effects. The sheet carrier concentration and the confinement of the two dimensional electron gases located close to the AlGaN/GaN interface are sensitive to a large number of different physical properties such as polarity, alloy composition, strain, thickness, and doping of the AlGaN barrier. We have investigated these physical properties for undoped and silicon doped transistor structures by a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance–voltage profiling measurements. The polarization induced sheet charge bound at the AlGaN/GaN interfaces was calculated from different sets of piezoelectric constants available in the literature. The sheet carrier concentration induced by polarization charges was determined self-consistently from a coupled Schrödinger and Poisson equation solver for pseudomorphically and partially relaxed barriers with different alloy compositions. By comparison of theoretical and experimental results, we demonstrate that the formation of two dimensional electron gases in undoped and doped AlGaN/GaN structures rely both on piezoelectric and spontaneous polarization induced effects. In addition, mechanisms reducing the sheet carrier concentrations like nonabrupt interfaces, dislocations, and the possible influence of surface states on the two dimensional electron gases will be discussed briefly. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face AlxGa1−xN/GaN/AlxGa1−xN and N-face GaN/AlxGa1−xN/GaN heterostructures used for the fabrication of field effect transistors. Analysis of the measured electron distributions in heterostructures with AlGaN barrier layers of different Al concentrations (0.15〈x〈0.5) and thickness between 20 and 65 nm demonstrate the important role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces. Characterization of the electrical properties of nominally undoped transistor structures reveals the presence of high sheet carrier concentrations, increasing from 6×1012 to 2×1013 cm−2 in the GaN channel with increasing Al-concentration from x=0.15 to 0.31. The observed high sheet carrier concentrations and strong confinement at specific interfaces of the N- and Ga-face pseudomorphic grown heterostructures can be explained as a consequence of interface charges induced by piezoelectric and spontaneous polarization effects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Inorganic chemistry 5 (1966), S. 1832-1834 
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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